Improved 750 Degrees C Expitaxial Crystal Silicon Solar Cells Through Impurity Reduction

Sachit Grover; David L. Young; Vincenzo Lasalvia; Jian V. Li; Howard M. Branz; Paul Stradins; Charles W. Teplin

doi:10.1109/PVSC.2013.6744097

Improved 750 Degrees C Expitaxial Crystal Silicon Solar Cells Through Impurity Reduction

Sachit Grover, David L. Young, Vincenzo Lasalvia, Jian V. Li, Howard M. Branz, Paul Stradins, Charles W. Teplin

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

We characterize and improve epitaxial silicon films for solar cells grown by hot-wire chemical vapor deposition (HWCVD). The hot-wire filament temperature is found to affect the incorporation of impurities and the surface roughness of the films. Lowering the filament temperature leads to improved epitaxial films with lower impurities and smoother surfaces. Solar cells made with the improved material grown on low-cost silicon templates have open-circuit voltages (V _OC) ∼600 mV and efficiency exceeding 10%.

Original language	American English
Pages	51-53
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2013.6744097 https://doi.org/10.1109/PVSC.2013.6744097
State	Published - 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: 16 Jun 2013 → 21 Jun 2013

Conference

Conference	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	16/06/13 → 21/06/13

NREL Publication Number

NREL/CP-5200-57911

Keywords

DLTS
Epitaxial silicon
Hot-wire CVD
Impurities
Solar cells

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Grover, S., Young, D. L., Lasalvia, V., Li, J. V., Branz, H. M., Stradins, P., & Teplin, C. W. (2013). Improved 750 Degrees C Expitaxial Crystal Silicon Solar Cells Through Impurity Reduction. 51-53. Paper presented at 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States. https://doi.org/10.1109/PVSC.2013.6744097, https://doi.org/10.1109/PVSC.2013.6744097

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abstract = "We characterize and improve epitaxial silicon films for solar cells grown by hot-wire chemical vapor deposition (HWCVD). The hot-wire filament temperature is found to affect the incorporation of impurities and the surface roughness of the films. Lowering the filament temperature leads to improved epitaxial films with lower impurities and smoother surfaces. Solar cells made with the improved material grown on low-cost silicon templates have open-circuit voltages (V OC) ∼600 mV and efficiency exceeding 10%.",

keywords = "DLTS, Epitaxial silicon, Hot-wire CVD, Impurities, Solar cells",

author = "Sachit Grover and Young, {David L.} and Vincenzo Lasalvia and Li, {Jian V.} and Branz, {Howard M.} and Paul Stradins and Teplin, {Charles W.}",

year = "2013",

doi = "10.1109/PVSC.2013.6744097",

language = "American English",

pages = "51--53",

note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

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Grover, S, Young, DL, Lasalvia, V, Li, JV, Branz, HM, Stradins, P & Teplin, CW 2013, 'Improved 750 Degrees C Expitaxial Crystal Silicon Solar Cells Through Impurity Reduction', Paper presented at 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 16/06/13 - 21/06/13 pp. 51-53. https://doi.org/10.1109/PVSC.2013.6744097, https://doi.org/10.1109/PVSC.2013.6744097

TY - CONF

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AU - Grover, Sachit

AU - Young, David L.

AU - Lasalvia, Vincenzo

AU - Li, Jian V.

AU - Branz, Howard M.

AU - Stradins, Paul

AU - Teplin, Charles W.

PY - 2013

Y1 - 2013

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AB - We characterize and improve epitaxial silicon films for solar cells grown by hot-wire chemical vapor deposition (HWCVD). The hot-wire filament temperature is found to affect the incorporation of impurities and the surface roughness of the films. Lowering the filament temperature leads to improved epitaxial films with lower impurities and smoother surfaces. Solar cells made with the improved material grown on low-cost silicon templates have open-circuit voltages (V OC) ∼600 mV and efficiency exceeding 10%.

KW - DLTS

KW - Epitaxial silicon

KW - Hot-wire CVD

KW - Impurities

KW - Solar cells

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DO - 10.1109/PVSC.2013.6744097

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T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

Y2 - 16 June 2013 through 21 June 2013

ER -

Improved 750 Degrees C Expitaxial Crystal Silicon Solar Cells Through Impurity Reduction

Abstract

Conference

NREL Publication Number

Keywords

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