Improved Amorphous Silicon Alloy Solar Cells for Module Fabrication

Improved Amorphous Silicon Alloy Solar Cells for Module Fabrication

Research output: Contribution to conference › Paper

Abstract

An initial conversion efficiency of 13.5 percent has been obtained on a triple-junction triple-bandgap device fabricated in a large-area deposition reactor capable of producing one-square-foot modules. The intrinsic layer of the top cell is a wide bandgap amorphous silicon alloy. The middle and bottom cells employ high quality amorphous silicon-germanium alloy. The high efficiency of thetriple-junction cell is attributed to the relative reduction of the optical loss in the top tunnel junction and the improvement in the quality of the middle and bottom component cells. Triple-junction devices with initial efficiency of 13.3 percent have shown saturation at 11.6 percent after light soaking. Modules of aperture area 909 cm2 have been fabricated using an assembly process similar tothe one being currently used in our manufacturing line. The module design consists of one large-area, high-current monolithic multijunction device. The status of the small-area devices and modules is described.

Original language	American English
Pages	711-716
Number of pages	6
State	Published - 1997
Event	Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium - San Francisco, California Duration: 31 Mar 1997 → 4 Apr 1997

Conference

Conference	Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium
City	San Francisco, California
Period	31/03/97 → 4/04/97

Bibliographical note

Work performed by United Solar Systems Corp., Troy, Michigan

NREL Publication Number

NREL/CP-520-24561

Cite this

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title = "Improved Amorphous Silicon Alloy Solar Cells for Module Fabrication",

abstract = "An initial conversion efficiency of 13.5 percent has been obtained on a triple-junction triple-bandgap device fabricated in a large-area deposition reactor capable of producing one-square-foot modules. The intrinsic layer of the top cell is a wide bandgap amorphous silicon alloy. The middle and bottom cells employ high quality amorphous silicon-germanium alloy. The high efficiency of thetriple-junction cell is attributed to the relative reduction of the optical loss in the top tunnel junction and the improvement in the quality of the middle and bottom component cells. Triple-junction devices with initial efficiency of 13.3 percent have shown saturation at 11.6 percent after light soaking. Modules of aperture area 909 cm2 have been fabricated using an assembly process similar tothe one being currently used in our manufacturing line. The module design consists of one large-area, high-current monolithic multijunction device. The status of the small-area devices and modules is described.",

author = "NREL",

note = "Work performed by United Solar Systems Corp., Troy, Michigan; Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium ; Conference date: 31-03-1997 Through 04-04-1997",

year = "1997",

language = "American English",

pages = "711--716",

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TY - CONF

T1 - Improved Amorphous Silicon Alloy Solar Cells for Module Fabrication

AU - NREL, null

N1 - Work performed by United Solar Systems Corp., Troy, Michigan

PY - 1997

Y1 - 1997

N2 - An initial conversion efficiency of 13.5 percent has been obtained on a triple-junction triple-bandgap device fabricated in a large-area deposition reactor capable of producing one-square-foot modules. The intrinsic layer of the top cell is a wide bandgap amorphous silicon alloy. The middle and bottom cells employ high quality amorphous silicon-germanium alloy. The high efficiency of thetriple-junction cell is attributed to the relative reduction of the optical loss in the top tunnel junction and the improvement in the quality of the middle and bottom component cells. Triple-junction devices with initial efficiency of 13.3 percent have shown saturation at 11.6 percent after light soaking. Modules of aperture area 909 cm2 have been fabricated using an assembly process similar tothe one being currently used in our manufacturing line. The module design consists of one large-area, high-current monolithic multijunction device. The status of the small-area devices and modules is described.

AB - An initial conversion efficiency of 13.5 percent has been obtained on a triple-junction triple-bandgap device fabricated in a large-area deposition reactor capable of producing one-square-foot modules. The intrinsic layer of the top cell is a wide bandgap amorphous silicon alloy. The middle and bottom cells employ high quality amorphous silicon-germanium alloy. The high efficiency of thetriple-junction cell is attributed to the relative reduction of the optical loss in the top tunnel junction and the improvement in the quality of the middle and bottom component cells. Triple-junction devices with initial efficiency of 13.3 percent have shown saturation at 11.6 percent after light soaking. Modules of aperture area 909 cm2 have been fabricated using an assembly process similar tothe one being currently used in our manufacturing line. The module design consists of one large-area, high-current monolithic multijunction device. The status of the small-area devices and modules is described.

M3 - Paper

SP - 711

EP - 716

T2 - Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium

Y2 - 31 March 1997 through 4 April 1997

ER -

Improved Amorphous Silicon Alloy Solar Cells for Module Fabrication

Abstract

Conference

Bibliographical note

NREL Publication Number

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Cite this