Improved Contacts for Tandem Cells with Enhanced Effciency Grown by D-HVPE

Research output: Contribution to conferencePaperpeer-review


Dynamic hydride vapor phase epitaxy (D-HVPE) has provided a potential route towards lower cost material growth of III-V photovoltaic devices. A highly doped Ga0.5In0.5P emitter layer is grown in attempt to force passivation at the front of the cell to account for the absence of a suitable window layer in our reactor. Control over dopant diffusion in these materials is thus critical to achieving high-efficiency device performance. Here, we institute a two-step contact layer design that boosts tandem cell efficiencies by minimizing Se diffusion into the underlying emitter layer while still providing sufficiently low contact resistance. Short-circuit current in these devices improves to 8.9mA/cm2in an uncoated GaInP/GaAs cell, an improvement of 1.2 mA/cm2 over our previous best cell. Conversion efficiency with the new contact doping scheme is projected to be 27% with the inclusion of a standard ARC layer.

Original languageAmerican English
Number of pages3
StatePublished - 14 Jun 2020
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: 15 Jun 202021 Aug 2020


Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NREL Publication Number

  • NREL/CP-5900-75945


  • HVPE
  • III-V
  • tandem devices


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