Abstract
Dynamic hydride vapor phase epitaxy (D-HVPE) has provided a potential route towards lower cost material growth of III-V photovoltaic devices. A highly doped Ga0.5In0.5P emitter layer is grown in attempt to force passivation at the front of the cell to account for the absence of a suitable window layer in our reactor. Control over dopant diffusion in these materials is thus critical to achieving high-efficiency device performance. Here, we institute a two-step contact layer design that boosts tandem cell efficiencies by minimizing Se diffusion into the underlying emitter layer while still providing sufficiently low contact resistance. Short-circuit current in these devices improves to 8.9mA/cm2in an uncoated GaInP/GaAs cell, an improvement of 1.2 mA/cm2 over our previous best cell. Conversion efficiency with the new contact doping scheme is projected to be 27% with the inclusion of a standard ARC layer.
Original language | American English |
---|---|
Pages | 1265-1267 |
Number of pages | 3 |
DOIs | |
State | Published - 14 Jun 2020 |
Event | 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020 |
Conference
Conference | 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 |
---|---|
Country/Territory | Canada |
City | Calgary |
Period | 15/06/20 → 21/08/20 |
Bibliographical note
Publisher Copyright:© 2020 IEEE.
NREL Publication Number
- NREL/CP-5900-75945
Keywords
- HVPE
- III-V
- tandem devices