Improved mu-c-Si p-Layer and a-Si i-Layer Materials using VHF Plasma Deposition

doi:10.1109/PVSC.1997.654158

Improved mu-c-Si p-Layer and a-Si i-Layer Materials using VHF Plasma Deposition

Research output: Contribution to conference › Paper

Abstract

Microcrystalline Si p-layers have been widely used in a-Si solar cell technology to achieve high efficiency. To further improve the solar cell performance, we have studied the deposition of high quality ..mu..c-Si p-layer material using a modified very high frequency (VHF) plasma enhanced CVD process and consequently have improved the solar cell current. This improvement was primarily in the blueresponse which leads to a 6-10% improvement in the overall solar cell efficiency. In addition, we have explored the deposition of a-Si at high rates using VHF plasma, and compared these VHF i-layers with RF plasma deposited i-layers. With improved deposition conditions, VHF intrinsic layers deposited at a rate up to 15 ..angstrom../s show similar device performance and light stability to VHF andRF i-layers deposited at low rates, and show higher stability than RF i-layers deposited at high rates in the same deposition system. A 10.9% single-junction solar cell was fabricated using a VHF deposited i-layer.

Original language	American English
Pages	591-594
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1997.654158
State	Published - 1997
Event	Twenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	Twenty Sixth IEEE Photovoltaic Specialists Conference
City	Anaheim, California
Period	29/09/97 → 3/10/97

Bibliographical note

Work performed by Energy Conversion Devices, Inc., Troy, Michigan

NREL Publication Number

NREL/CP-520-24979

Access to Document

10.1109/PVSC.1997.654158

Cite this

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title = "Improved mu-c-Si p-Layer and a-Si i-Layer Materials using VHF Plasma Deposition",

abstract = "Microcrystalline Si p-layers have been widely used in a-Si solar cell technology to achieve high efficiency. To further improve the solar cell performance, we have studied the deposition of high quality ..mu..c-Si p-layer material using a modified very high frequency (VHF) plasma enhanced CVD process and consequently have improved the solar cell current. This improvement was primarily in the blueresponse which leads to a 6-10% improvement in the overall solar cell efficiency. In addition, we have explored the deposition of a-Si at high rates using VHF plasma, and compared these VHF i-layers with RF plasma deposited i-layers. With improved deposition conditions, VHF intrinsic layers deposited at a rate up to 15 ..angstrom../s show similar device performance and light stability to VHF andRF i-layers deposited at low rates, and show higher stability than RF i-layers deposited at high rates in the same deposition system. A 10.9% single-junction solar cell was fabricated using a VHF deposited i-layer.",

author = "NREL",

note = "Work performed by Energy Conversion Devices, Inc., Troy, Michigan; Twenty Sixth IEEE Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

year = "1997",

doi = "10.1109/PVSC.1997.654158",

language = "American English",

pages = "591--594",

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TY - CONF

T1 - Improved mu-c-Si p-Layer and a-Si i-Layer Materials using VHF Plasma Deposition

AU - NREL, null

N1 - Work performed by Energy Conversion Devices, Inc., Troy, Michigan

PY - 1997

Y1 - 1997

N2 - Microcrystalline Si p-layers have been widely used in a-Si solar cell technology to achieve high efficiency. To further improve the solar cell performance, we have studied the deposition of high quality ..mu..c-Si p-layer material using a modified very high frequency (VHF) plasma enhanced CVD process and consequently have improved the solar cell current. This improvement was primarily in the blueresponse which leads to a 6-10% improvement in the overall solar cell efficiency. In addition, we have explored the deposition of a-Si at high rates using VHF plasma, and compared these VHF i-layers with RF plasma deposited i-layers. With improved deposition conditions, VHF intrinsic layers deposited at a rate up to 15 ..angstrom../s show similar device performance and light stability to VHF andRF i-layers deposited at low rates, and show higher stability than RF i-layers deposited at high rates in the same deposition system. A 10.9% single-junction solar cell was fabricated using a VHF deposited i-layer.

AB - Microcrystalline Si p-layers have been widely used in a-Si solar cell technology to achieve high efficiency. To further improve the solar cell performance, we have studied the deposition of high quality ..mu..c-Si p-layer material using a modified very high frequency (VHF) plasma enhanced CVD process and consequently have improved the solar cell current. This improvement was primarily in the blueresponse which leads to a 6-10% improvement in the overall solar cell efficiency. In addition, we have explored the deposition of a-Si at high rates using VHF plasma, and compared these VHF i-layers with RF plasma deposited i-layers. With improved deposition conditions, VHF intrinsic layers deposited at a rate up to 15 ..angstrom../s show similar device performance and light stability to VHF andRF i-layers deposited at low rates, and show higher stability than RF i-layers deposited at high rates in the same deposition system. A 10.9% single-junction solar cell was fabricated using a VHF deposited i-layer.

U2 - 10.1109/PVSC.1997.654158

DO - 10.1109/PVSC.1997.654158

M3 - Paper

SP - 591

EP - 594

T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Improved mu-c-Si p-Layer and a-Si i-Layer Materials using VHF Plasma Deposition

Abstract

Conference

Bibliographical note

NREL Publication Number

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Cite this