Improved Stability Against Light-Exposure in Deuterated Amorphous Silicon Alloy Solar Cells

Improved Stability Against Light-Exposure in Deuterated Amorphous Silicon Alloy Solar Cells

Research output: Contribution to conference › Paper

Abstract

We have studied light-induced degradation in hydrogenated and deuterated amorphous silicon alloy solar cells in which intrinsic layers were deposited by using SiH4+H2 and SiD4+D2 gas mixtures respectively. Replacing hydrogen with deuterium in the intrinsic layer of the cell improves stability against light exposure. On the other hand, cells in which intrinsic layers were deposited from SiD4+H2and SiH4+D2 do not show any improvement in stability. This result shows that improved stability in deuterated cell does not originate from simple replacement of hydrogen with deuterium. From deuterium/hydrogen effusion measurements, we found similar effusion at low temperature (400 degrees C) in both deuterated film and hydrogenated film prepared with heavy dilution. The latter film was shown tohave oriented microstructure which was correlated with higher stability. This correlation strongly indicates that microstructure of the material plays a key role in improving the stability.

Original language	American English
Pages	49-54
Number of pages	6
State	Published - 1997
Event	Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium - San Francisco, California Duration: 31 Mar 1997 → 4 Apr 1997

Conference

Conference	Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium
City	San Francisco, California
Period	31/03/97 → 4/04/97

Bibliographical note

Work performed by United Solar Systems Corp., Troy, Michigan

NREL Publication Number

NREL/CP-520-24540

Cite this

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title = "Improved Stability Against Light-Exposure in Deuterated Amorphous Silicon Alloy Solar Cells",

abstract = "We have studied light-induced degradation in hydrogenated and deuterated amorphous silicon alloy solar cells in which intrinsic layers were deposited by using SiH4+H2 and SiD4+D2 gas mixtures respectively. Replacing hydrogen with deuterium in the intrinsic layer of the cell improves stability against light exposure. On the other hand, cells in which intrinsic layers were deposited from SiD4+H2and SiH4+D2 do not show any improvement in stability. This result shows that improved stability in deuterated cell does not originate from simple replacement of hydrogen with deuterium. From deuterium/hydrogen effusion measurements, we found similar effusion at low temperature (400 degrees C) in both deuterated film and hydrogenated film prepared with heavy dilution. The latter film was shown tohave oriented microstructure which was correlated with higher stability. This correlation strongly indicates that microstructure of the material plays a key role in improving the stability.",

author = "NREL",

note = "Work performed by United Solar Systems Corp., Troy, Michigan; Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium ; Conference date: 31-03-1997 Through 04-04-1997",

year = "1997",

language = "American English",

pages = "49--54",

}

TY - CONF

T1 - Improved Stability Against Light-Exposure in Deuterated Amorphous Silicon Alloy Solar Cells

AU - NREL, null

N1 - Work performed by United Solar Systems Corp., Troy, Michigan

PY - 1997

Y1 - 1997

N2 - We have studied light-induced degradation in hydrogenated and deuterated amorphous silicon alloy solar cells in which intrinsic layers were deposited by using SiH4+H2 and SiD4+D2 gas mixtures respectively. Replacing hydrogen with deuterium in the intrinsic layer of the cell improves stability against light exposure. On the other hand, cells in which intrinsic layers were deposited from SiD4+H2and SiH4+D2 do not show any improvement in stability. This result shows that improved stability in deuterated cell does not originate from simple replacement of hydrogen with deuterium. From deuterium/hydrogen effusion measurements, we found similar effusion at low temperature (400 degrees C) in both deuterated film and hydrogenated film prepared with heavy dilution. The latter film was shown tohave oriented microstructure which was correlated with higher stability. This correlation strongly indicates that microstructure of the material plays a key role in improving the stability.

AB - We have studied light-induced degradation in hydrogenated and deuterated amorphous silicon alloy solar cells in which intrinsic layers were deposited by using SiH4+H2 and SiD4+D2 gas mixtures respectively. Replacing hydrogen with deuterium in the intrinsic layer of the cell improves stability against light exposure. On the other hand, cells in which intrinsic layers were deposited from SiD4+H2and SiH4+D2 do not show any improvement in stability. This result shows that improved stability in deuterated cell does not originate from simple replacement of hydrogen with deuterium. From deuterium/hydrogen effusion measurements, we found similar effusion at low temperature (400 degrees C) in both deuterated film and hydrogenated film prepared with heavy dilution. The latter film was shown tohave oriented microstructure which was correlated with higher stability. This correlation strongly indicates that microstructure of the material plays a key role in improving the stability.

M3 - Paper

SP - 49

EP - 54

T2 - Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium

Y2 - 31 March 1997 through 4 April 1997

ER -

Improved Stability Against Light-Exposure in Deuterated Amorphous Silicon Alloy Solar Cells

Abstract

Conference

Bibliographical note

NREL Publication Number

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Cite this