Improvement in Carrier Transport Properties by Mild Thermal Annealing of PbS Quantum Dot Solar Cells

Jianbo Gao; Sohee Jeong; Feng Lin; Peter T. Erslev; Octavi E. Semonin; Joseph M. Luther; Matthew C. Beard

doi:10.1063/1.4789434

Improvement in Carrier Transport Properties by Mild Thermal Annealing of PbS Quantum Dot Solar Cells

Jianbo Gao, Sohee Jeong, Feng Lin, Peter T. Erslev, Octavi E. Semonin, Joseph M. Luther, Matthew C. Beard

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Abstract

We studied the effect of post-deposition thermal annealing in the preparation of PbS quantum dot (QD) solar cells. We find an optimal annealing temperature that improves the power conversion efficiency by a factor of 1.5 for different sized QDs with bandgaps of 1.65 and 1.27 eV. We examined the onset of the photocurrent response and correlated that with domain grain growth and find that annealing the PbS QD array at 120 °C causes little change in the PbS QD size, bandgap, and open-circuit voltage and yet leads to an increase in the carrier transport as realized by an improved current response. We also find a decrease in the activation energy of a shallow trap, which also likely contributes to the improvement in the solar cell efficiency.

Original language	American English
Article number	043506
Number of pages	5
Journal	Applied Physics Letters
Volume	102
Issue number	4
DOIs	https://doi.org/10.1063/1.4789434 https://doi.org/10.1063/1.4789434
State	Published - 28 Jan 2013

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NREL/JA-5900-57211

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title = "Improvement in Carrier Transport Properties by Mild Thermal Annealing of PbS Quantum Dot Solar Cells",

abstract = "We studied the effect of post-deposition thermal annealing in the preparation of PbS quantum dot (QD) solar cells. We find an optimal annealing temperature that improves the power conversion efficiency by a factor of 1.5 for different sized QDs with bandgaps of 1.65 and 1.27 eV. We examined the onset of the photocurrent response and correlated that with domain grain growth and find that annealing the PbS QD array at 120 °C causes little change in the PbS QD size, bandgap, and open-circuit voltage and yet leads to an increase in the carrier transport as realized by an improved current response. We also find a decrease in the activation energy of a shallow trap, which also likely contributes to the improvement in the solar cell efficiency.",

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AU - Gao, Jianbo

AU - Jeong, Sohee

AU - Lin, Feng

AU - Erslev, Peter T.

AU - Semonin, Octavi E.

AU - Luther, Joseph M.

AU - Beard, Matthew C.

PY - 2013/1/28

Y1 - 2013/1/28

N2 - We studied the effect of post-deposition thermal annealing in the preparation of PbS quantum dot (QD) solar cells. We find an optimal annealing temperature that improves the power conversion efficiency by a factor of 1.5 for different sized QDs with bandgaps of 1.65 and 1.27 eV. We examined the onset of the photocurrent response and correlated that with domain grain growth and find that annealing the PbS QD array at 120 °C causes little change in the PbS QD size, bandgap, and open-circuit voltage and yet leads to an increase in the carrier transport as realized by an improved current response. We also find a decrease in the activation energy of a shallow trap, which also likely contributes to the improvement in the solar cell efficiency.

AB - We studied the effect of post-deposition thermal annealing in the preparation of PbS quantum dot (QD) solar cells. We find an optimal annealing temperature that improves the power conversion efficiency by a factor of 1.5 for different sized QDs with bandgaps of 1.65 and 1.27 eV. We examined the onset of the photocurrent response and correlated that with domain grain growth and find that annealing the PbS QD array at 120 °C causes little change in the PbS QD size, bandgap, and open-circuit voltage and yet leads to an increase in the carrier transport as realized by an improved current response. We also find a decrease in the activation energy of a shallow trap, which also likely contributes to the improvement in the solar cell efficiency.

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Improvement in Carrier Transport Properties by Mild Thermal Annealing of PbS Quantum Dot Solar Cells

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