Improvement of Front-Junction GaInP by Point-Defect Injection and Annealing

Research output: Contribution to conferencePaperpeer-review

7 Scopus Citations


Traditional front junction GaInP solar cells are radiation tolerant and can have good diffusion length, but have limited voltage and thus efficiency. Here, we investigate the impact of annealing on GaInP device performance. First, Zn-doped GaInP/AlGaInP double heterojunction structures are studied in order to investigate the impact of annealing in a simple structure. While standard anneals lower diffusion length and lifetime, annealing after injecting point-defects improves material quality, presumably by eliminating sources of non-radiative recombination. Atomic ordering is reduced by the anneal, which raises the device bandgap and requires consideration. These results can be used to improve front junction device performance while controlling the bandgap. Then, GaInP front-junction devices are created using anneals with and without point-defect injection. Voc and EQE trends follow the diffusion length and lifetime trends from the DH structures. Baseline devices have Woc of 0.484 V, raising to 0.504 V after a high temperature anneal. However, injecting point defects prior to the anneal results in a front junction device with Woc of 0.405 V and a diffusion length greater than 8 μm. Optimized front-junction GaInP devices with an ARC have 20% efficiency without a rear reflector.

Original languageAmerican English
Number of pages3
StatePublished - 20 Jun 2021
Event48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States
Duration: 20 Jun 202125 Jun 2021


Conference48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/TerritoryUnited States
CityFort Lauderdale

Bibliographical note

See NREL/CP-5900-80242 for preprint

NREL Publication Number

  • NREL/CP-5900-81296


  • anneal
  • GaInP
  • III-V multijunction


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