Improvement of InP-GaAs-Si Quality by Thermal-Cycle Growth

Improvement of InP-GaAs-Si Quality by Thermal-Cycle Growth

Research output: Contribution to conference › Paper

Original language	American English
Pages	163-169
Number of pages	7
State	Published - 1990
Event	Epitaxial Heterostructures: Materials Research Society Symposium - San Francisco, California Duration: 16 Apr 1990 → 19 Apr 1990

Conference

Conference	Epitaxial Heterostructures: Materials Research Society Symposium
City	San Francisco, California
Period	16/04/90 → 19/04/90

Bibliographical note

Work performed by Spire Corporation, Bedford, Massachusetts; Solar Energy Research Institute, Golden, Colorado; Material Science Dept., UCLA; and Electrical and Computer Engineering Dept., SUNY at Buffalo

NREL Publication Number

ACNR/CP-213-11969

Cite this

@conference{c37007a336fb496f8be4aa63a5c82fdd,

title = "Improvement of InP-GaAs-Si Quality by Thermal-Cycle Growth",

author = "NREL",

note = "Work performed by Spire Corporation, Bedford, Massachusetts; Solar Energy Research Institute, Golden, Colorado; Material Science Dept., UCLA; and Electrical and Computer Engineering Dept., SUNY at Buffalo; Epitaxial Heterostructures: Materials Research Society Symposium ; Conference date: 16-04-1990 Through 19-04-1990",

year = "1990",

language = "American English",

pages = "163--169",

}

TY - CONF

T1 - Improvement of InP-GaAs-Si Quality by Thermal-Cycle Growth

AU - NREL, null

N1 - Work performed by Spire Corporation, Bedford, Massachusetts; Solar Energy Research Institute, Golden, Colorado; Material Science Dept., UCLA; and Electrical and Computer Engineering Dept., SUNY at Buffalo

PY - 1990

Y1 - 1990

M3 - Paper

SP - 163

EP - 169

T2 - Epitaxial Heterostructures: Materials Research Society Symposium

Y2 - 16 April 1990 through 19 April 1990

ER -