Improving Electron Transport in Ga-Doped Zn0.7Mg0.3O, A Wide-Gap Band-Edge-Energy-Tunable Transparent Conducting Oxide

John Perkins; Stephan Lany; Joseph Berry; Andriy Zakutayev; Philip Parilla; David Ginley; Yi Ke; Brian Gorman; Tim Ohno; Ryan O'Hayre

doi:10.1109/PVSC.2014.6925671

Improving Electron Transport in Ga-Doped Zn0.7Mg0.3O, A Wide-Gap Band-Edge-Energy-Tunable Transparent Conducting Oxide

John Perkins, Stephan Lany, Joseph Berry, Andriy Zakutayev, Philip Parilla, David Ginley, Yi Ke, Brian Gorman, Tim Ohno, Ryan O'Hayre

Colorado School of Mines

Research output: Contribution to conference › Paper › peer-review

Abstract

The band gap increase in Zn(Mg)O alloys with increasing Mg enables tunable control of the conduction band alignment. However, the conductivity decreases monotonically with increasing Mg. Here, we show that the leading cause of the conductivity decrease is the increased formation of acceptor-like compensating intrinsic defects, such as zinc vacancies (V_Zn), which reduce the free electron concentration and decrease the mobility through ionized impurity scattering. Post-deposition annealing of Ga-doped Zn_0.7Mg_0.3O films grown by pulsed laser deposition increases the mobility by 50% due to pairing of oppositely charged defects, resulting in a conductivity as high as σ = 475 S/cm.

Original language	American English
Pages	3435-3437
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2014.6925671 https://doi.org/10.1109/PVSC.2014.6925671
State	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

NREL/CP-5K00-61339

Keywords

Sputter
TCO
Thin Film
Transparent Conducting Oxide
ZnO

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Perkins, J., Lany, S., Berry, J., Zakutayev, A., Parilla, P., Ginley, D., Ke, Y., Gorman, B., Ohno, T., & O'Hayre, R. (2014). Improving Electron Transport in Ga-Doped Zn0.7Mg0.3O, A Wide-Gap Band-Edge-Energy-Tunable Transparent Conducting Oxide. 3435-3437. Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States. https://doi.org/10.1109/PVSC.2014.6925671, https://doi.org/10.1109/PVSC.2014.6925671

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abstract = "The band gap increase in Zn(Mg)O alloys with increasing Mg enables tunable control of the conduction band alignment. However, the conductivity decreases monotonically with increasing Mg. Here, we show that the leading cause of the conductivity decrease is the increased formation of acceptor-like compensating intrinsic defects, such as zinc vacancies (VZn), which reduce the free electron concentration and decrease the mobility through ionized impurity scattering. Post-deposition annealing of Ga-doped Zn0.7Mg0.3O films grown by pulsed laser deposition increases the mobility by 50% due to pairing of oppositely charged defects, resulting in a conductivity as high as σ = 475 S/cm.",

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author = "John Perkins and Stephan Lany and Joseph Berry and Andriy Zakutayev and Philip Parilla and David Ginley and Yi Ke and Brian Gorman and Tim Ohno and Ryan O'Hayre",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

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day = "15",

doi = "10.1109/PVSC.2014.6925671",

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Perkins, J, Lany, S , Berry, J , Zakutayev, A , Parilla, P , Ginley, D, Ke, Y, Gorman, B, Ohno, T & O'Hayre, R 2014, 'Improving Electron Transport in Ga-Doped Zn0.7Mg0.3O, A Wide-Gap Band-Edge-Energy-Tunable Transparent Conducting Oxide', Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14 - 13/06/14 pp. 3435-3437. https://doi.org/10.1109/PVSC.2014.6925671, https://doi.org/10.1109/PVSC.2014.6925671

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T1 - Improving Electron Transport in Ga-Doped Zn0.7Mg0.3O, A Wide-Gap Band-Edge-Energy-Tunable Transparent Conducting Oxide

AU - Perkins, John

AU - Lany, Stephan

AU - Berry, Joseph

AU - Zakutayev, Andriy

AU - Parilla, Philip

AU - Ginley, David

AU - Ke, Yi

AU - Gorman, Brian

AU - Ohno, Tim

AU - O'Hayre, Ryan

PY - 2014/10/15

Y1 - 2014/10/15

N2 - The band gap increase in Zn(Mg)O alloys with increasing Mg enables tunable control of the conduction band alignment. However, the conductivity decreases monotonically with increasing Mg. Here, we show that the leading cause of the conductivity decrease is the increased formation of acceptor-like compensating intrinsic defects, such as zinc vacancies (VZn), which reduce the free electron concentration and decrease the mobility through ionized impurity scattering. Post-deposition annealing of Ga-doped Zn0.7Mg0.3O films grown by pulsed laser deposition increases the mobility by 50% due to pairing of oppositely charged defects, resulting in a conductivity as high as σ = 475 S/cm.

AB - The band gap increase in Zn(Mg)O alloys with increasing Mg enables tunable control of the conduction band alignment. However, the conductivity decreases monotonically with increasing Mg. Here, we show that the leading cause of the conductivity decrease is the increased formation of acceptor-like compensating intrinsic defects, such as zinc vacancies (VZn), which reduce the free electron concentration and decrease the mobility through ionized impurity scattering. Post-deposition annealing of Ga-doped Zn0.7Mg0.3O films grown by pulsed laser deposition increases the mobility by 50% due to pairing of oppositely charged defects, resulting in a conductivity as high as σ = 475 S/cm.

KW - Sputter

KW - TCO

KW - Thin Film

KW - Transparent Conducting Oxide

KW - ZnO

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U2 - 10.1109/PVSC.2014.6925671

DO - 10.1109/PVSC.2014.6925671

M3 - Paper

AN - SCOPUS:84912090766

SP - 3435

EP - 3437

T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Improving Electron Transport in Ga-Doped Zn0.7Mg0.3O, A Wide-Gap Band-Edge-Energy-Tunable Transparent Conducting Oxide

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

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