Improving GaAsP/Si Tandem Solar Cells Using Silicon Passivated Contacts

Vincenzo LaSalvia; William Nemeth; Jacob Boyer; Daniel Lepowski; Emily Makoutz; Theresa Saenz; Steven Ringel; Tyler Grassman; Emily Warren

doi:10.1109/PVSC45281.2020.9300356

Improving GaAsP/Si Tandem Solar Cells Using Silicon Passivated Contacts

Vincenzo LaSalvia, William Nemeth, Jacob Boyer, Daniel Lepowski, Emily Makoutz, Theresa Saenz, Steven Ringel, Tyler Grassman, Emily Warren

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

Abstract

The degradation of photocarrier bulk lifetime in Si wafer substrates during the heteroepitaxial growth of III-V materials has been widely reported and is known to limit the efficiency of III-V/Si tandem solar cells. There have been prior strategies to protect Si lifetime in III-V growth chambers, but most require the use of a protective layer that must be removed in subsequent device processing. It would be advantageous for protective layers to remain an active part of the device. In this work, we demonstrate that a polycrystalline silicon (poly-Si) passivated contact can protect the minority carrier lifetime of the Si base wafer during the organometallic vapor phase epitaxy of III-V materials on silicon substrates.

Original language	American English
Pages	1719-1720
Number of pages	2
DOIs	https://doi.org/10.1109/PVSC45281.2020.9300356 https://doi.org/10.1109/PVSC45281.2020.9300356
State	Published - 14 Jun 2020
Event	47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020

Conference

Conference	47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/Territory	Canada
City	Calgary
Period	15/06/20 → 21/08/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NREL Publication Number

NREL/CP-5900-75940

Keywords

GaP
III-V on Si epitaxy
minority carrier lifetime
Si
tandem

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LaSalvia, V., Nemeth, W., Boyer, J., Lepowski, D., Makoutz, E., Saenz, T., Ringel, S., Grassman, T., & Warren, E. (2020). Improving GaAsP/Si Tandem Solar Cells Using Silicon Passivated Contacts. 1719-1720. Paper presented at 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada. https://doi.org/10.1109/PVSC45281.2020.9300356, https://doi.org/10.1109/PVSC45281.2020.9300356

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abstract = "The degradation of photocarrier bulk lifetime in Si wafer substrates during the heteroepitaxial growth of III-V materials has been widely reported and is known to limit the efficiency of III-V/Si tandem solar cells. There have been prior strategies to protect Si lifetime in III-V growth chambers, but most require the use of a protective layer that must be removed in subsequent device processing. It would be advantageous for protective layers to remain an active part of the device. In this work, we demonstrate that a polycrystalline silicon (poly-Si) passivated contact can protect the minority carrier lifetime of the Si base wafer during the organometallic vapor phase epitaxy of III-V materials on silicon substrates.",

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doi = "10.1109/PVSC45281.2020.9300356",

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LaSalvia, V, Nemeth, W, Boyer, J, Lepowski, D, Makoutz, E, Saenz, T, Ringel, S, Grassman, T & Warren, E 2020, 'Improving GaAsP/Si Tandem Solar Cells Using Silicon Passivated Contacts', Paper presented at 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada, 15/06/20 - 21/08/20 pp. 1719-1720. https://doi.org/10.1109/PVSC45281.2020.9300356, https://doi.org/10.1109/PVSC45281.2020.9300356

TY - CONF

T1 - Improving GaAsP/Si Tandem Solar Cells Using Silicon Passivated Contacts

AU - LaSalvia, Vincenzo

AU - Nemeth, William

AU - Boyer, Jacob

AU - Lepowski, Daniel

AU - Makoutz, Emily

AU - Saenz, Theresa

AU - Ringel, Steven

AU - Grassman, Tyler

AU - Warren, Emily

PY - 2020/6/14

Y1 - 2020/6/14

N2 - The degradation of photocarrier bulk lifetime in Si wafer substrates during the heteroepitaxial growth of III-V materials has been widely reported and is known to limit the efficiency of III-V/Si tandem solar cells. There have been prior strategies to protect Si lifetime in III-V growth chambers, but most require the use of a protective layer that must be removed in subsequent device processing. It would be advantageous for protective layers to remain an active part of the device. In this work, we demonstrate that a polycrystalline silicon (poly-Si) passivated contact can protect the minority carrier lifetime of the Si base wafer during the organometallic vapor phase epitaxy of III-V materials on silicon substrates.

AB - The degradation of photocarrier bulk lifetime in Si wafer substrates during the heteroepitaxial growth of III-V materials has been widely reported and is known to limit the efficiency of III-V/Si tandem solar cells. There have been prior strategies to protect Si lifetime in III-V growth chambers, but most require the use of a protective layer that must be removed in subsequent device processing. It would be advantageous for protective layers to remain an active part of the device. In this work, we demonstrate that a polycrystalline silicon (poly-Si) passivated contact can protect the minority carrier lifetime of the Si base wafer during the organometallic vapor phase epitaxy of III-V materials on silicon substrates.

KW - GaP

KW - III-V on Si epitaxy

KW - minority carrier lifetime

KW - Si

KW - tandem

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DO - 10.1109/PVSC45281.2020.9300356

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T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020

Y2 - 15 June 2020 through 21 August 2020

ER -

Improving GaAsP/Si Tandem Solar Cells Using Silicon Passivated Contacts

Abstract

Conference

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NREL Publication Number

Keywords

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