Improving Low-Bandgap Tin-Lead Perovskite Solar Cells via Contact Engineering and Gas Quench Processing

Jeremie Werner; Taylor Moot; Tyler Gossett; Isaac Gould; Axel Palmstrom; Eli Wolf; Caleb Boyd; Maikel van Hest; Joseph Luther; Joseph Berry; Michael McGehee

doi:10.1021/acsenergylett.0c00255

Improving Low-Bandgap Tin-Lead Perovskite Solar Cells via Contact Engineering and Gas Quench Processing

Jeremie Werner, Taylor Moot, Tyler Gossett, Isaac Gould, Axel Palmstrom, Eli Wolf, Caleb Boyd, Maikel van Hest, Joseph Luther, Joseph Berry, Michael McGehee

Research output: Contribution to journal › Article › peer-review

82 Scopus Citations

Abstract

Low-bandgap Sn/Pb ABX₃ perovskites have reached photovoltaic power conversion efficiencies >20%, but they usually have poor stability due to the common use of acidic poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) hole transport layers and A-site cation compositions containing methylammonium (MA). Here, we develop a process to enable high-quality MA-free Sn/Pb perovskite films grown using a gas quenching process instead of the conventional antisolvents, which provides improved control of the film growth and eliminates wrinkling. Using this method in a device structure with poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) instead of PEDOT:PSS as the hole transport layer, devices can reach efficiencies up to 20%_mppt at 0.06 cm² and up to 17.5%_mppt at 1 cm² active area. With these improvements, the devices are characterized for thermal stability and show 80% of the initial power output remaining after 4000 h at 85 °C.

Original language	American English
Pages (from-to)	1215-1223
Number of pages	9
Journal	ACS Energy Letters
Volume	5
Issue number	4
DOIs	https://doi.org/10.1021/acsenergylett.0c00255 https://doi.org/10.1021/acsenergylett.0c00255
State	Published - 10 Apr 2020

Bibliographical note

Publisher Copyright:
© 2020 American Chemical Society.

NREL Publication Number

NREL/JA-5K00-76189

Keywords

film growth
gas quenching
perovskites
power conversion efficiency

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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Werner, J., Moot, T., Gossett, T., Gould, I., Palmstrom, A., Wolf, E., Boyd, C., van Hest, M., Luther, J., Berry, J., & McGehee, M. (2020). Improving Low-Bandgap Tin-Lead Perovskite Solar Cells via Contact Engineering and Gas Quench Processing. ACS Energy Letters, 5(4), 1215-1223. https://doi.org/10.1021/acsenergylett.0c00255, https://doi.org/10.1021/acsenergylett.0c00255

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title = "Improving Low-Bandgap Tin-Lead Perovskite Solar Cells via Contact Engineering and Gas Quench Processing",

abstract = "Low-bandgap Sn/Pb ABX3 perovskites have reached photovoltaic power conversion efficiencies >20%, but they usually have poor stability due to the common use of acidic poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) hole transport layers and A-site cation compositions containing methylammonium (MA). Here, we develop a process to enable high-quality MA-free Sn/Pb perovskite films grown using a gas quenching process instead of the conventional antisolvents, which provides improved control of the film growth and eliminates wrinkling. Using this method in a device structure with poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) instead of PEDOT:PSS as the hole transport layer, devices can reach efficiencies up to 20%mppt at 0.06 cm2 and up to 17.5%mppt at 1 cm2 active area. With these improvements, the devices are characterized for thermal stability and show 80% of the initial power output remaining after 4000 h at 85 °C.",

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Werner, J, Moot, T, Gossett, T, Gould, I, Palmstrom, A, Wolf, E, Boyd, C, van Hest, M, Luther, J , Berry, J & McGehee, M 2020, 'Improving Low-Bandgap Tin-Lead Perovskite Solar Cells via Contact Engineering and Gas Quench Processing', ACS Energy Letters, vol. 5, no. 4, pp. 1215-1223. https://doi.org/10.1021/acsenergylett.0c00255, https://doi.org/10.1021/acsenergylett.0c00255

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AU - Werner, Jeremie

AU - Moot, Taylor

AU - Gossett, Tyler

AU - Gould, Isaac

AU - Palmstrom, Axel

AU - Wolf, Eli

AU - Boyd, Caleb

AU - van Hest, Maikel

AU - Luther, Joseph

AU - Berry, Joseph

AU - McGehee, Michael

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N2 - Low-bandgap Sn/Pb ABX3 perovskites have reached photovoltaic power conversion efficiencies >20%, but they usually have poor stability due to the common use of acidic poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) hole transport layers and A-site cation compositions containing methylammonium (MA). Here, we develop a process to enable high-quality MA-free Sn/Pb perovskite films grown using a gas quenching process instead of the conventional antisolvents, which provides improved control of the film growth and eliminates wrinkling. Using this method in a device structure with poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) instead of PEDOT:PSS as the hole transport layer, devices can reach efficiencies up to 20%mppt at 0.06 cm2 and up to 17.5%mppt at 1 cm2 active area. With these improvements, the devices are characterized for thermal stability and show 80% of the initial power output remaining after 4000 h at 85 °C.

AB - Low-bandgap Sn/Pb ABX3 perovskites have reached photovoltaic power conversion efficiencies >20%, but they usually have poor stability due to the common use of acidic poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) hole transport layers and A-site cation compositions containing methylammonium (MA). Here, we develop a process to enable high-quality MA-free Sn/Pb perovskite films grown using a gas quenching process instead of the conventional antisolvents, which provides improved control of the film growth and eliminates wrinkling. Using this method in a device structure with poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) instead of PEDOT:PSS as the hole transport layer, devices can reach efficiencies up to 20%mppt at 0.06 cm2 and up to 17.5%mppt at 1 cm2 active area. With these improvements, the devices are characterized for thermal stability and show 80% of the initial power output remaining after 4000 h at 85 °C.

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Improving Low-Bandgap Tin-Lead Perovskite Solar Cells via Contact Engineering and Gas Quench Processing

Abstract

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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