Improving Performance of Superstrate p-i-n a-Si Solar Cells by Optimization of n/TCO/Metal Back Contacts

Research output: Contribution to conferencePaper

Abstract

A comprehensive study of the n-layer and back contact for superstrate (glass/textured SnO2/p-i-n/TCO/metal) a-Si solar cells is presented. In particular, the difference between a-Si and ..mu..c-Si n-layers are compared. These results show that the efficiency can be improved from 7% to 10% (absolute) by optimizing the back contact layers to incorporate a good optical back reflector. A rectifyingcontact is formed between the TCO and a-Si n-layer which reduces FF. A ..mu..c-Si n-layer eliminates the blocking n/TCO contact. Results suggest that the n/TCO interface has a controlling influence. ZnO gives approx. 1 mA/cm2 higher Jsc compared to Ito. The best contacts are ..mu..c-Si/ZnO/metal.
Original languageAmerican English
Pages603-606
Number of pages4
DOIs
StatePublished - 1997
EventTwenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California
Duration: 29 Sep 19973 Oct 1997

Conference

ConferenceTwenty Sixth IEEE Photovoltaic Specialists Conference
CityAnaheim, California
Period29/09/973/10/97

Bibliographical note

Work performed by University of Delaware, Newark, Delaware

NREL Publication Number

  • NREL/CP-520-24983

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