Improving Performance of Superstrate p-i-n a-Si Solar Cells by Optimization of n/TCO/Metal Back Contacts

doi:10.1109/PVSC.1997.654161

Improving Performance of Superstrate p-i-n a-Si Solar Cells by Optimization of n/TCO/Metal Back Contacts

Research output: Contribution to conference › Paper

Abstract

A comprehensive study of the n-layer and back contact for superstrate (glass/textured SnO2/p-i-n/TCO/metal) a-Si solar cells is presented. In particular, the difference between a-Si and ..mu..c-Si n-layers are compared. These results show that the efficiency can be improved from 7% to 10% (absolute) by optimizing the back contact layers to incorporate a good optical back reflector. A rectifyingcontact is formed between the TCO and a-Si n-layer which reduces FF. A ..mu..c-Si n-layer eliminates the blocking n/TCO contact. Results suggest that the n/TCO interface has a controlling influence. ZnO gives approx. 1 mA/cm2 higher Jsc compared to Ito. The best contacts are ..mu..c-Si/ZnO/metal.

Original language	American English
Pages	603-606
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1997.654161
State	Published - 1997
Event	Twenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	Twenty Sixth IEEE Photovoltaic Specialists Conference
City	Anaheim, California
Period	29/09/97 → 3/10/97

Bibliographical note

Work performed by University of Delaware, Newark, Delaware

NREL Publication Number

NREL/CP-520-24983

Access to Document

10.1109/PVSC.1997.654161

Cite this

@conference{e5d33c2787854d7aa2884ec1fb01fcef,

title = "Improving Performance of Superstrate p-i-n a-Si Solar Cells by Optimization of n/TCO/Metal Back Contacts",

abstract = "A comprehensive study of the n-layer and back contact for superstrate (glass/textured SnO2/p-i-n/TCO/metal) a-Si solar cells is presented. In particular, the difference between a-Si and ..mu..c-Si n-layers are compared. These results show that the efficiency can be improved from 7% to 10% (absolute) by optimizing the back contact layers to incorporate a good optical back reflector. A rectifyingcontact is formed between the TCO and a-Si n-layer which reduces FF. A ..mu..c-Si n-layer eliminates the blocking n/TCO contact. Results suggest that the n/TCO interface has a controlling influence. ZnO gives approx. 1 mA/cm2 higher Jsc compared to Ito. The best contacts are ..mu..c-Si/ZnO/metal.",

author = "NREL",

note = "Work performed by University of Delaware, Newark, Delaware; Twenty Sixth IEEE Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

year = "1997",

doi = "10.1109/PVSC.1997.654161",

language = "American English",

pages = "603--606",

}

TY - CONF

T1 - Improving Performance of Superstrate p-i-n a-Si Solar Cells by Optimization of n/TCO/Metal Back Contacts

AU - NREL, null

N1 - Work performed by University of Delaware, Newark, Delaware

PY - 1997

Y1 - 1997

N2 - A comprehensive study of the n-layer and back contact for superstrate (glass/textured SnO2/p-i-n/TCO/metal) a-Si solar cells is presented. In particular, the difference between a-Si and ..mu..c-Si n-layers are compared. These results show that the efficiency can be improved from 7% to 10% (absolute) by optimizing the back contact layers to incorporate a good optical back reflector. A rectifyingcontact is formed between the TCO and a-Si n-layer which reduces FF. A ..mu..c-Si n-layer eliminates the blocking n/TCO contact. Results suggest that the n/TCO interface has a controlling influence. ZnO gives approx. 1 mA/cm2 higher Jsc compared to Ito. The best contacts are ..mu..c-Si/ZnO/metal.

AB - A comprehensive study of the n-layer and back contact for superstrate (glass/textured SnO2/p-i-n/TCO/metal) a-Si solar cells is presented. In particular, the difference between a-Si and ..mu..c-Si n-layers are compared. These results show that the efficiency can be improved from 7% to 10% (absolute) by optimizing the back contact layers to incorporate a good optical back reflector. A rectifyingcontact is formed between the TCO and a-Si n-layer which reduces FF. A ..mu..c-Si n-layer eliminates the blocking n/TCO contact. Results suggest that the n/TCO interface has a controlling influence. ZnO gives approx. 1 mA/cm2 higher Jsc compared to Ito. The best contacts are ..mu..c-Si/ZnO/metal.

U2 - 10.1109/PVSC.1997.654161

DO - 10.1109/PVSC.1997.654161

M3 - Paper

SP - 603

EP - 606

T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Improving Performance of Superstrate p-i-n a-Si Solar Cells by Optimization of n/TCO/Metal Back Contacts

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

Fingerprint

Cite this