Abstract
We investigate tin oxide growth on fullerene (C60) by atomic layer deposition (ALD) for C60/oxide bilayer electron selective contacts in P-I-N metal halide perovskite (MHP) solar cells. An in situ ozone functionalization step is incorporated in an ALD SnOx process to suppress sub-surface growth, leading to improved internal barrier performance of ALD SnOx thin films grown on fullerene surfaces. We show that this approach decreases the water-vapor transmission rate of C60/ALD SnOx barriers by an order of magnitude and improves the barrier properties against gas, solvent, and halide migration. Furthermore, ozone-treated SnOx barriers can narrow photovoltaic performance distribution without compromising efficiency. We demonstrate the universality of this approach in wide-, intermediate-, and low-gap perovskite systems and further show that enhancement of the ALD barrier layer is critical toward improving the yield of all-perovskite tandem solar cells. Two-terminal all-perovskite tandem solar cells incorporating ozone nucleation are reported at over 24% photovoltaic conversion efficiency.
Original language | American English |
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Pages (from-to) | 2873-2893 |
Number of pages | 21 |
Journal | Joule |
Volume | 7 |
Issue number | 12 |
DOIs | |
State | Published - 2023 |
NREL Publication Number
- NREL/JA-5K00-84908
Keywords
- atomic layer deposition
- internal barrier
- metal halide perovskite solar cells
- nucleation
- ozone functionalization
- tandem solar cell
- tin oxide