Impurity and Temperature Effects on the Rate of Light Induced Degradation in a-Si:H p-i-n Devices: Implications to Device Design

Impurity and Temperature Effects on the Rate of Light Induced Degradation in a-Si:H p-i-n Devices: Implications to Device Design

Research output: Contribution to conference › Paper

Original language	American English
Pages	1378-1382
Number of pages	5
State	Published - 1985
Event	Eighteenth IEEE Photovoltaic Specialists Conference-1985 - Las Vegas, Nevada Duration: 21 Oct 1985 → 25 Oct 1985

Conference

Conference	Eighteenth IEEE Photovoltaic Specialists Conference-1985
City	Las Vegas, Nevada
Period	21/10/85 → 25/10/85

Bibliographical note

Work performed by Thin Film Division, Solarex Corporation, Newtown, Pennsylvania

NREL Publication Number

ACNR/CP-7837

Cite this

@conference{9183218a3f6a4bbaa65013b0bf0f9be9,

title = "Impurity and Temperature Effects on the Rate of Light Induced Degradation in a-Si:H p-i-n Devices: Implications to Device Design",

author = "NREL",

note = "Work performed by Thin Film Division, Solarex Corporation, Newtown, Pennsylvania; Eighteenth IEEE Photovoltaic Specialists Conference-1985 ; Conference date: 21-10-1985 Through 25-10-1985",

year = "1985",

language = "American English",

pages = "1378--1382",

}

TY - CONF

T1 - Impurity and Temperature Effects on the Rate of Light Induced Degradation in a-Si:H p-i-n Devices: Implications to Device Design

AU - NREL, null

N1 - Work performed by Thin Film Division, Solarex Corporation, Newtown, Pennsylvania

PY - 1985

Y1 - 1985

M3 - Paper

SP - 1378

EP - 1382

T2 - Eighteenth IEEE Photovoltaic Specialists Conference-1985

Y2 - 21 October 1985 through 25 October 1985

ER -