Impurity-Band Model for GaP1-xNx

Research output: Contribution to conferencePaper

Abstract

Low-temperature absorption studies on free-standing GaP1-xNx films provide direct experimental evidence that the host conduction-band minimum (CBM) near X1C does not plunge downward with increased nitrogen doping, contrary to what has been suggested recently; rather, it remains stationary for x up to 0.1%. This fact, combined with the results of earlier studies of the CBM at ..GAMMA.. andconduction-band edge near L, confirms that the giant bandgap lowering observed in GaP1-xNx results from a CBM that evolves purely from nitrogen impurity bands.
Original languageAmerican English
Number of pages5
StatePublished - 2005
Event2005 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado
Duration: 7 Nov 200510 Nov 2005

Conference

Conference2005 DOE Solar Energy Technologies Program Review Meeting
CityDenver, Colorado
Period7/11/0510/11/05

Bibliographical note

Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102006-2245; NREL/CD-520-38557)

NREL Publication Number

  • NREL/CP-590-39020

Keywords

  • impurity-band
  • NREL
  • photovoltaics (PV)
  • PV
  • solar

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