Impurity Segregation in LPE Growth of Silicon from Cu-Al Solutions

Engineering

• Liquid Phase Epitaxy 100%
• Experimental Result 50%
• Silicon Surface 50%
• Cell Performance 50%
• Surface Oxide 50%
• Thin Layer 50%
• Silicon Layer 50%
• Substrate Surface 50%
• Regular Solution 50%
• Growth Temperature 50%
• Getters 50%
• Solar Cell 50%
• Epitaxial Film 50%

Material Science

• Silicon 100%
• Liquid Phase Epitaxy 100%
• Liquid Interface 40%
• Surface (Surface Science) 40%
• Solar Cell 20%
• Epitaxy 20%
• Oxide Surface 20%
• Epitaxial Film 20%