TY - JOUR
T1 - In situ Al2O3 Incorporation Enhances the Efficiency of CuIn(S,Se)2 Solar Cells Prepared from Molecular-Ink Solutions
AU - Muzzillo, Christopher
AU - Septina, Wilman
AU - Perkins, Craig
AU - Giovanelli, Anne
AU - West, Thomas
AU - Ohtaki, Kenta
AU - Ishii, Hope
AU - Bradley, John
AU - Zhu, Kai
AU - Gaillard, Nicolas
N1 - Publisher Copyright:
© The Royal Society of Chemistry 2021.
PY - 2021/4/28
Y1 - 2021/4/28
N2 - We report an efficiency enhancement of solution-processed CuIn(S,Se)2(CISSe) thin film solar cellsvia in situincorporation of Al2O3. These films were produced using inks containing CuCl, InCl3, AlNO3(Al/Al + In: 0.1) and thiourea dissolved in methanol. After spin coating of these solutions in air, samples were subjected to a selenization process. Auger electron spectroscopy depth-profiling analysis showed that Al is evenly distributed throughout the bulk of the film. Transmission electron microscopy revealed that AlNO3precursor reacted with oxygen to form nanosized amorphous Al2O3grains located within the bulk and grain boundaries of CISSe, as well as at both the top and bottom interfaces. Power conversion efficiency (PCE) as high as 11.6% (JSC: 35.8 mA cm−2,VOC: 518 mV, FF: 62.2%, no anti-reflection coating) was achieved with Al-CISSe solar cell devices integrated with CdS (chemical bath deposition, thickness: 80 nm) and ZnO/ITO bilayers (sputtered, thickness: 300 nm). The average PCE (10.1%, 〈JSC〉: 34.5 mA cm−2, 〈VOC〉: 491 mV, 〈FF〉: 59.8%) was nearly 4% (absolute) higher than that measured on CISSe baseline cells fabricated from solutions without Al (〈PCE〉 = 6.4%, 〈JSC〉: 32.8 mA cm−2, 〈VOC〉: 410 mV, 〈FF〉: 47.3%). Thisin situAl2O3incorporation is speculated to play a role in the enhancement of theVOCand FF of the devices through passivation of defects in CISSe reducing interface and bulk recombination, as evidenced by a reduced defect density and an increased activation energy of the dominant recombination mechanism from capacitance and temperature-dependentVOCmeasurements, respectively.
AB - We report an efficiency enhancement of solution-processed CuIn(S,Se)2(CISSe) thin film solar cellsvia in situincorporation of Al2O3. These films were produced using inks containing CuCl, InCl3, AlNO3(Al/Al + In: 0.1) and thiourea dissolved in methanol. After spin coating of these solutions in air, samples were subjected to a selenization process. Auger electron spectroscopy depth-profiling analysis showed that Al is evenly distributed throughout the bulk of the film. Transmission electron microscopy revealed that AlNO3precursor reacted with oxygen to form nanosized amorphous Al2O3grains located within the bulk and grain boundaries of CISSe, as well as at both the top and bottom interfaces. Power conversion efficiency (PCE) as high as 11.6% (JSC: 35.8 mA cm−2,VOC: 518 mV, FF: 62.2%, no anti-reflection coating) was achieved with Al-CISSe solar cell devices integrated with CdS (chemical bath deposition, thickness: 80 nm) and ZnO/ITO bilayers (sputtered, thickness: 300 nm). The average PCE (10.1%, 〈JSC〉: 34.5 mA cm−2, 〈VOC〉: 491 mV, 〈FF〉: 59.8%) was nearly 4% (absolute) higher than that measured on CISSe baseline cells fabricated from solutions without Al (〈PCE〉 = 6.4%, 〈JSC〉: 32.8 mA cm−2, 〈VOC〉: 410 mV, 〈FF〉: 47.3%). Thisin situAl2O3incorporation is speculated to play a role in the enhancement of theVOCand FF of the devices through passivation of defects in CISSe reducing interface and bulk recombination, as evidenced by a reduced defect density and an increased activation energy of the dominant recombination mechanism from capacitance and temperature-dependentVOCmeasurements, respectively.
KW - Al2O3
KW - chalcopyrite
KW - molecular ink
KW - passivation
KW - photovoltaics
UR - http://www.scopus.com/inward/record.url?scp=85105019642&partnerID=8YFLogxK
U2 - 10.1039/d1ta00768h
DO - 10.1039/d1ta00768h
M3 - Article
AN - SCOPUS:85105019642
SN - 2050-7488
VL - 9
SP - 10419
EP - 10426
JO - Journal of Materials Chemistry A
JF - Journal of Materials Chemistry A
IS - 16
ER -