In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy

Stuart Farrell; Teresa Barnes; Wyatt Metzger; J. Park; R. Kodama; S. Sivananthan

doi:10.1007/s11664-015-3913-3

In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy

Stuart Farrell, Teresa Barnes, Wyatt Metzger, J. Park, R. Kodama, S. Sivananthan

Materials Science

EPIR Technologies

Research output: Contribution to journal › Article › peer-review

20 Scopus Citations

Abstract

p-Type doping of the absorbed layer has been a significant challenge for CdTe solar cells. In this work, we report on in situ arsenic doping of molecular beam epitaxy (MBE) CdTe grown on Si(211) and the use of a cadmium overpressure to enhance incorporation. When growing CdTe:As without a Cd overpressure, extremely high As fluxes are required to achieve noticeable amounts of arsenic incorporation. By supplying a Cd flux during growth, the As incorporation increases by an order of magnitude. By including a Cd overpressure during growth, we have obtained single-crystal CdTe:As films with As incorporation concentration of $$1\times 10^{17} \, \mathrm {\rm cm}^{-3}$$1×¹⁰¹⁷ ^cm-3. An activation anneal was performed on these films in a rapid thermal annealing furnace, resulting in p-type layers with net carrier concentration of ∼5 × 10¹⁶ cm⁻³.

Original language	American English
Pages (from-to)	3202-3206
Number of pages	5
Journal	Journal of Electronic Materials
Volume	44
Issue number	9
DOIs	https://doi.org/10.1007/s11664-015-3913-3 https://doi.org/10.1007/s11664-015-3913-3
State	Published - 2015

Bibliographical note

Publisher Copyright:
© 2015, The Minerals, Metals & Materials Society (outside the USA).

NREL Publication Number

NREL/JA-5K00-63986

Keywords

arsenic doping
CdTe
II−VI
Molecular beam epitaxy
photovoltaics
SIMS

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title = "In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy",

abstract = "p-Type doping of the absorbed layer has been a significant challenge for CdTe solar cells. In this work, we report on in situ arsenic doping of molecular beam epitaxy (MBE) CdTe grown on Si(211) and the use of a cadmium overpressure to enhance incorporation. When growing CdTe:As without a Cd overpressure, extremely high As fluxes are required to achieve noticeable amounts of arsenic incorporation. By supplying a Cd flux during growth, the As incorporation increases by an order of magnitude. By including a Cd overpressure during growth, we have obtained single-crystal CdTe:As films with As incorporation concentration of $$1\times 10^{17} \, \mathrm {\rm cm}^{-3}$$1×1017 cm-3. An activation anneal was performed on these films in a rapid thermal annealing furnace, resulting in p-type layers with net carrier concentration of ∼5 × 1016 cm−3.",

keywords = "arsenic doping, CdTe, II−VI, Molecular beam epitaxy, photovoltaics, SIMS",

author = "Stuart Farrell and Teresa Barnes and Wyatt Metzger and J. Park and R. Kodama and S. Sivananthan",

note = "Publisher Copyright: {\textcopyright} 2015, The Minerals, Metals & Materials Society (outside the USA).",

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doi = "10.1007/s11664-015-3913-3",

language = "American English",

volume = "44",

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AU - Farrell, Stuart

AU - Barnes, Teresa

AU - Metzger, Wyatt

AU - Park, J.

AU - Kodama, R.

AU - Sivananthan, S.

PY - 2015

Y1 - 2015

N2 - p-Type doping of the absorbed layer has been a significant challenge for CdTe solar cells. In this work, we report on in situ arsenic doping of molecular beam epitaxy (MBE) CdTe grown on Si(211) and the use of a cadmium overpressure to enhance incorporation. When growing CdTe:As without a Cd overpressure, extremely high As fluxes are required to achieve noticeable amounts of arsenic incorporation. By supplying a Cd flux during growth, the As incorporation increases by an order of magnitude. By including a Cd overpressure during growth, we have obtained single-crystal CdTe:As films with As incorporation concentration of $$1\times 10^{17} \, \mathrm {\rm cm}^{-3}$$1×1017 cm-3. An activation anneal was performed on these films in a rapid thermal annealing furnace, resulting in p-type layers with net carrier concentration of ∼5 × 1016 cm−3.

AB - p-Type doping of the absorbed layer has been a significant challenge for CdTe solar cells. In this work, we report on in situ arsenic doping of molecular beam epitaxy (MBE) CdTe grown on Si(211) and the use of a cadmium overpressure to enhance incorporation. When growing CdTe:As without a Cd overpressure, extremely high As fluxes are required to achieve noticeable amounts of arsenic incorporation. By supplying a Cd flux during growth, the As incorporation increases by an order of magnitude. By including a Cd overpressure during growth, we have obtained single-crystal CdTe:As films with As incorporation concentration of $$1\times 10^{17} \, \mathrm {\rm cm}^{-3}$$1×1017 cm-3. An activation anneal was performed on these films in a rapid thermal annealing furnace, resulting in p-type layers with net carrier concentration of ∼5 × 1016 cm−3.

KW - arsenic doping

KW - CdTe

KW - II−VI

KW - Molecular beam epitaxy

KW - photovoltaics

KW - SIMS

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SP - 3202

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 9

ER -

In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy

Abstract

Bibliographical note

NREL Publication Number

Keywords

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