In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy

Stuart Farrell, Teresa Barnes, Wyatt Metzger, J. Park, R. Kodama, S. Sivananthan

Research output: Contribution to journalArticlepeer-review

20 Scopus Citations


p-Type doping of the absorbed layer has been a significant challenge for CdTe solar cells. In this work, we report on in situ arsenic doping of molecular beam epitaxy (MBE) CdTe grown on Si(211) and the use of a cadmium overpressure to enhance incorporation. When growing CdTe:As without a Cd overpressure, extremely high As fluxes are required to achieve noticeable amounts of arsenic incorporation. By supplying a Cd flux during growth, the As incorporation increases by an order of magnitude. By including a Cd overpressure during growth, we have obtained single-crystal CdTe:As films with As incorporation concentration of $$1\times 10^{17} \, \mathrm {\rm cm}^{-3}$$1×1017 cm-3. An activation anneal was performed on these films in a rapid thermal annealing furnace, resulting in p-type layers with net carrier concentration of ∼5 × 1016 cm−3.

Original languageAmerican English
Pages (from-to)3202-3206
Number of pages5
JournalJournal of Electronic Materials
Issue number9
StatePublished - 2015

Bibliographical note

Publisher Copyright:
© 2015, The Minerals, Metals & Materials Society (outside the USA).

NREL Publication Number

  • NREL/JA-5K00-63986


  • arsenic doping
  • CdTe
  • II−VI
  • Molecular beam epitaxy
  • photovoltaics
  • SIMS


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