In-Situ Characterization of the Amorphous to Microscrystalline Transition in Hot Wire CVD Growth of Si:H Using Real Time Spectroscopic Ellipsometry

D. H. Levi; B. P. Nelson; J. D. Perkins; H. R. Moutinho

In-Situ Characterization of the Amorphous to Microscrystalline Transition in Hot Wire CVD Growth of Si:H Using Real Time Spectroscopic Ellipsometry

D. H. Levi, B. P. Nelson, J. D. Perkins, H. R. Moutinho

Materials, Chemical, and Computational Science Research Operations

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

We have used in-situ real-time spectroscopic ellipsometry (RTSE) to characterize the morphology and crystallinity of hot-wire CVD (HWCVD) Si:H films as a function of hydrogen dilution R=[H]/[H+SiH₄], substrate temperature T_s, and film thickness d_b. Transitions from one mode of film growth to another are correlated with changes in the magnitude of the surface roughness during growth. The degree of crystallinity of the film can be determined from the form of the dielectric function. We have studied the growth parameter space for R from 0 to 14, T_s of 250°C and 500°C, and d_b from 0 to 1 μm. We have mapped out the crystallinity vs. R, T_s, and d_b based on our analysis of the RTSE data. These results have been corroborated using Raman scattering and atomic force microscopy to characterize the crystallinity and surface morphology of the films.

Original language	American English
Pages	1146-1149
Number of pages	4
State	Published - 2002
Event	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 19 May 2002 → 24 May 2002

Conference

Conference	29th IEEE Photovoltaic Specialists Conference
Country/Territory	United States
City	New Orleans, LA
Period	19/05/02 → 24/05/02

Bibliographical note

For preprint version including full text online document, see NREL/CP-520-32283

NREL Publication Number

NREL/CP-520-33730

Cite this

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title = "In-Situ Characterization of the Amorphous to Microscrystalline Transition in Hot Wire CVD Growth of Si:H Using Real Time Spectroscopic Ellipsometry",

abstract = "We have used in-situ real-time spectroscopic ellipsometry (RTSE) to characterize the morphology and crystallinity of hot-wire CVD (HWCVD) Si:H films as a function of hydrogen dilution R=[H]/[H+SiH4], substrate temperature Ts, and film thickness db. Transitions from one mode of film growth to another are correlated with changes in the magnitude of the surface roughness during growth. The degree of crystallinity of the film can be determined from the form of the dielectric function. We have studied the growth parameter space for R from 0 to 14, Ts of 250°C and 500°C, and db from 0 to 1 μm. We have mapped out the crystallinity vs. R, Ts, and db based on our analysis of the RTSE data. These results have been corroborated using Raman scattering and atomic force microscopy to characterize the crystallinity and surface morphology of the films.",

author = "Levi, {D. H.} and Nelson, {B. P.} and Perkins, {J. D.} and Moutinho, {H. R.}",

note = "For preprint version including full text online document, see NREL/CP-520-32283; 29th IEEE Photovoltaic Specialists Conference ; Conference date: 19-05-2002 Through 24-05-2002",

year = "2002",

language = "American English",

pages = "1146--1149",

}

In-Situ Characterization of the Amorphous to Microscrystalline Transition in Hot Wire CVD Growth of Si:H Using Real Time Spectroscopic Ellipsometry. / Levi, D. H.; Nelson, B. P.; Perkins, J. D. et al.
2002. 1146-1149 Paper presented at 29th IEEE Photovoltaic Specialists Conference, New Orleans, LA, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - In-Situ Characterization of the Amorphous to Microscrystalline Transition in Hot Wire CVD Growth of Si:H Using Real Time Spectroscopic Ellipsometry

AU - Levi, D. H.

AU - Nelson, B. P.

AU - Perkins, J. D.

AU - Moutinho, H. R.

N1 - For preprint version including full text online document, see NREL/CP-520-32283

PY - 2002

Y1 - 2002

N2 - We have used in-situ real-time spectroscopic ellipsometry (RTSE) to characterize the morphology and crystallinity of hot-wire CVD (HWCVD) Si:H films as a function of hydrogen dilution R=[H]/[H+SiH4], substrate temperature Ts, and film thickness db. Transitions from one mode of film growth to another are correlated with changes in the magnitude of the surface roughness during growth. The degree of crystallinity of the film can be determined from the form of the dielectric function. We have studied the growth parameter space for R from 0 to 14, Ts of 250°C and 500°C, and db from 0 to 1 μm. We have mapped out the crystallinity vs. R, Ts, and db based on our analysis of the RTSE data. These results have been corroborated using Raman scattering and atomic force microscopy to characterize the crystallinity and surface morphology of the films.

AB - We have used in-situ real-time spectroscopic ellipsometry (RTSE) to characterize the morphology and crystallinity of hot-wire CVD (HWCVD) Si:H films as a function of hydrogen dilution R=[H]/[H+SiH4], substrate temperature Ts, and film thickness db. Transitions from one mode of film growth to another are correlated with changes in the magnitude of the surface roughness during growth. The degree of crystallinity of the film can be determined from the form of the dielectric function. We have studied the growth parameter space for R from 0 to 14, Ts of 250°C and 500°C, and db from 0 to 1 μm. We have mapped out the crystallinity vs. R, Ts, and db based on our analysis of the RTSE data. These results have been corroborated using Raman scattering and atomic force microscopy to characterize the crystallinity and surface morphology of the films.

UR - http://www.scopus.com/inward/record.url?scp=0036957794&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036957794

SP - 1146

EP - 1149

T2 - 29th IEEE Photovoltaic Specialists Conference

Y2 - 19 May 2002 through 24 May 2002

ER -

In-Situ Characterization of the Amorphous to Microscrystalline Transition in Hot Wire CVD Growth of Si:H Using Real Time Spectroscopic Ellipsometry

Abstract

Conference

Bibliographical note

NREL Publication Number

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