In Situ Strain Relaxation Comparison Between GaAsBi and GaInAs Grown by Molecular-Beam Epitaxy: Article No. 101908

Ryan France; Aaron Ptak; Chun Sheng Jiang

doi:10.1063/1.3562952

In Situ Strain Relaxation Comparison Between GaAsBi and GaInAs Grown by Molecular-Beam Epitaxy: Article No. 101908

Ryan France, Aaron Ptak, Chun Sheng Jiang

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	3
Journal	Applied Physics Letters
Volume	98
Issue number	10
DOIs	https://doi.org/10.1063/1.3562952
State	Published - 2011

NREL Publication Number

NREL/JA-5200-50869

Keywords

GaAsBi
GaInAs
molecular-beam epitaxy
thin films

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10.1063/1.3562952

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title = "In Situ Strain Relaxation Comparison Between GaAsBi and GaInAs Grown by Molecular-Beam Epitaxy: Article No. 101908",

keywords = "GaAsBi, GaInAs, molecular-beam epitaxy, thin films",

author = "Ryan France and Aaron Ptak and Jiang, {Chun Sheng}",

year = "2011",

doi = "10.1063/1.3562952",

language = "American English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T2 - Article No. 101908

AU - France, Ryan

AU - Ptak, Aaron

AU - Jiang, Chun Sheng

PY - 2011

Y1 - 2011

KW - GaAsBi

KW - GaInAs

KW - molecular-beam epitaxy

KW - thin films

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U2 - 10.1063/1.3562952

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M3 - Article

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VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

In Situ Strain Relaxation Comparison Between GaAsBi and GaInAs Grown by Molecular-Beam Epitaxy: Article No. 101908

NREL Publication Number

Keywords

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