Abstract
Real-time, in-situ characterization of hot-wire chemical vapor deposition (HWCVD) growth of hydrogenated silicon (Si:H) thin films offers unique insight into the properties of the materials and mechanisms of their growth. We have used in-situ spectroscopic ellipsometry to characterize Si:H crystallinity as a function of film thickness and deposition conditions. We find that the transition fromamorphous to microcrystalline growth is a strong function of film thickness and hydrogen dilution, and a weak function of substrate temperature. We have expressed this information in terms of a color-coded phase-space map of the amorphous to microcrystalline transition in HWCVD growth on crystalline Si substrates.
| Original language | American English |
|---|---|
| Number of pages | 7 |
| State | Published - 2003 |
| Event | National Center for Photovoltaics (NCPV) and Solar Program Review Meeting - Denver, Colorado Duration: 24 Mar 2003 → 26 Mar 2003 |
Conference
| Conference | National Center for Photovoltaics (NCPV) and Solar Program Review Meeting |
|---|---|
| City | Denver, Colorado |
| Period | 24/03/03 → 26/03/03 |
NREL Publication Number
- NREL/CP-520-33571
Keywords
- characterizations
- crystallinity
- hot-wire chemical vapor deposition (HWCVD)
- hydrogenated amorphous silicon (a-Si:H)
- real-time spectroscopic ellipsometry (RTSE)