In-Situ Studies of the Growth of Amorphous and Microcrystalline Silicon Using Real-Time Spectroscopic Ellipsometry

Research output: Contribution to conferencePaper

Abstract

Real-time, in-situ characterization of hot-wire chemical vapor deposition (HWCVD) growth of hydrogenated silicon (Si:H) thin films offers unique insight into the properties of the materials and mechanisms of their growth. We have used in-situ spectroscopic ellipsometry to characterize Si:H crystallinity as a function of film thickness and deposition conditions. We find that the transition fromamorphous to microcrystalline growth is a strong function of film thickness and hydrogen dilution, and a weak function of substrate temperature. We have expressed this information in terms of a color-coded phase-space map of the amorphous to microcrystalline transition in HWCVD growth on crystalline Si substrates.
Original languageAmerican English
Number of pages7
StatePublished - 2003
EventNational Center for Photovoltaics (NCPV) and Solar Program Review Meeting - Denver, Colorado
Duration: 24 Mar 200326 Mar 2003

Conference

ConferenceNational Center for Photovoltaics (NCPV) and Solar Program Review Meeting
CityDenver, Colorado
Period24/03/0326/03/03

NREL Publication Number

  • NREL/CP-520-33571

Keywords

  • characterizations
  • crystallinity
  • hot-wire chemical vapor deposition (HWCVD)
  • hydrogenated amorphous silicon (a-Si:H)
  • real-time spectroscopic ellipsometry (RTSE)

Fingerprint

Dive into the research topics of 'In-Situ Studies of the Growth of Amorphous and Microcrystalline Silicon Using Real-Time Spectroscopic Ellipsometry'. Together they form a unique fingerprint.

Cite this