In-Situ Studies of the Growth of Amorphous and Microcrystalline Silicon Using Real-Time Spectroscopic Ellipsometry

In-Situ Studies of the Growth of Amorphous and Microcrystalline Silicon Using Real-Time Spectroscopic Ellipsometry

NREL

Research output: Contribution to conference › Paper

Abstract

Real-time, in-situ characterization of hot-wire chemical vapor deposition (HWCVD) growth of hydrogenated silicon (Si:H) thin films offers unique insight into the properties of the materials and mechanisms of their growth. We have used in-situ spectroscopic ellipsometry to characterize Si:H crystallinity as a function of film thickness and deposition conditions. We find that the transition fromamorphous to microcrystalline growth is a strong function of film thickness and hydrogen dilution, and a weak function of substrate temperature. We have expressed this information in terms of a color-coded phase-space map of the amorphous to microcrystalline transition in HWCVD growth on crystalline Si substrates.

Original language	American English
Number of pages	7
State	Published - 2003
Event	National Center for Photovoltaics (NCPV) and Solar Program Review Meeting - Denver, Colorado Duration: 24 Mar 2003 → 26 Mar 2003

Conference

Conference	National Center for Photovoltaics (NCPV) and Solar Program Review Meeting
City	Denver, Colorado
Period	24/03/03 → 26/03/03

NLR Publication Number

NREL/CP-520-33571

Keywords

characterizations
crystallinity
hot-wire chemical vapor deposition (HWCVD)
hydrogenated amorphous silicon (a-Si:H)
real-time spectroscopic ellipsometry (RTSE)

Access to Document

https://www.nrel.gov/docs/fy03osti/33571.pdf

Cite this

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title = "In-Situ Studies of the Growth of Amorphous and Microcrystalline Silicon Using Real-Time Spectroscopic Ellipsometry",

abstract = "Real-time, in-situ characterization of hot-wire chemical vapor deposition (HWCVD) growth of hydrogenated silicon (Si:H) thin films offers unique insight into the properties of the materials and mechanisms of their growth. We have used in-situ spectroscopic ellipsometry to characterize Si:H crystallinity as a function of film thickness and deposition conditions. We find that the transition fromamorphous to microcrystalline growth is a strong function of film thickness and hydrogen dilution, and a weak function of substrate temperature. We have expressed this information in terms of a color-coded phase-space map of the amorphous to microcrystalline transition in HWCVD growth on crystalline Si substrates.",

keywords = "characterizations, crystallinity, hot-wire chemical vapor deposition (HWCVD), hydrogenated amorphous silicon (a-Si:H), real-time spectroscopic ellipsometry (RTSE)",

author = "NREL",

year = "2003",

language = "American English",

note = "National Center for Photovoltaics (NCPV) and Solar Program Review Meeting ; Conference date: 24-03-2003 Through 26-03-2003",

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TY - CONF

T1 - In-Situ Studies of the Growth of Amorphous and Microcrystalline Silicon Using Real-Time Spectroscopic Ellipsometry

AU - NREL, null

PY - 2003

Y1 - 2003

N2 - Real-time, in-situ characterization of hot-wire chemical vapor deposition (HWCVD) growth of hydrogenated silicon (Si:H) thin films offers unique insight into the properties of the materials and mechanisms of their growth. We have used in-situ spectroscopic ellipsometry to characterize Si:H crystallinity as a function of film thickness and deposition conditions. We find that the transition fromamorphous to microcrystalline growth is a strong function of film thickness and hydrogen dilution, and a weak function of substrate temperature. We have expressed this information in terms of a color-coded phase-space map of the amorphous to microcrystalline transition in HWCVD growth on crystalline Si substrates.

AB - Real-time, in-situ characterization of hot-wire chemical vapor deposition (HWCVD) growth of hydrogenated silicon (Si:H) thin films offers unique insight into the properties of the materials and mechanisms of their growth. We have used in-situ spectroscopic ellipsometry to characterize Si:H crystallinity as a function of film thickness and deposition conditions. We find that the transition fromamorphous to microcrystalline growth is a strong function of film thickness and hydrogen dilution, and a weak function of substrate temperature. We have expressed this information in terms of a color-coded phase-space map of the amorphous to microcrystalline transition in HWCVD growth on crystalline Si substrates.

KW - characterizations

KW - crystallinity

KW - hot-wire chemical vapor deposition (HWCVD)

KW - hydrogenated amorphous silicon (a-Si:H)

KW - real-time spectroscopic ellipsometry (RTSE)

M3 - Paper

T2 - National Center for Photovoltaics (NCPV) and Solar Program Review Meeting

Y2 - 24 March 2003 through 26 March 2003

ER -

In-Situ Studies of the Growth of Amorphous and Microcrystalline Silicon Using Real-Time Spectroscopic Ellipsometry

Abstract

Conference

NLR Publication Number

Keywords

Access to Document

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Cite this