In-Situ Studies of the Growth of Amorphous and Nanocrystalline Silicon Using Real Time Spectroscopic Ellipsometry

D. H. Levi; B. P. Nelson; E. Iwanizcko; C. W. Teplin

doi:10.1016/j.tsf.2003.11.235

In-Situ Studies of the Growth of Amorphous and Nanocrystalline Silicon Using Real Time Spectroscopic Ellipsometry

D. H. Levi, B. P. Nelson, E. Iwanizcko, C. W. Teplin

Materials, Chemical, and Computational Science Research Operations

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

4 Scopus Citations

Abstract

Real-time spectroscopic ellipsometry (RTSE) has been used to characterize the optical and structural properties of hot-wire CVD (HWCVD) deposited amorphous and nanocrystalline silicon as a function of hydrogen dilution, substrate temperature, and gas pressure. Throughout the range of parameters investigated in this three-dimensional parameter space we find good correlations between post-deposition conductivity measurements and the thickness of the film at the transition from amorphous to nanocrystalline growth, as indicated by a smoothening transition in the surface roughness measured by RTSE during film growth. These results validate the use of RTSE as an in-situ diagnostic to elucidate the nature of HWCVD film growth, particularly as it relates to maximization of photovoltaic device efficiency.

Original language	American English
Pages (from-to)	679-683
Number of pages	5
Journal	Thin Solid Films
Volume	455-456
DOIs	https://doi.org/10.1016/j.tsf.2003.11.235 https://doi.org/10.1016/j.tsf.2003.11.235
State	Published - 2004
Event	The 3rd International Conference on Spectroscopic Ellipsometry - Vienna, Austria Duration: 6 Jul 2003 → 11 Jul 2003

NREL Publication Number

NREL/JA-520-36453

Keywords

Hot-wire deposition
In-situ
Nanocrystalline silicon
Spectroscopic ellipsometry

Access to Document

Cite this

@article{3a6b5b068efc4ac3817cabd3c61e2e8a,

title = "In-Situ Studies of the Growth of Amorphous and Nanocrystalline Silicon Using Real Time Spectroscopic Ellipsometry",

abstract = "Real-time spectroscopic ellipsometry (RTSE) has been used to characterize the optical and structural properties of hot-wire CVD (HWCVD) deposited amorphous and nanocrystalline silicon as a function of hydrogen dilution, substrate temperature, and gas pressure. Throughout the range of parameters investigated in this three-dimensional parameter space we find good correlations between post-deposition conductivity measurements and the thickness of the film at the transition from amorphous to nanocrystalline growth, as indicated by a smoothening transition in the surface roughness measured by RTSE during film growth. These results validate the use of RTSE as an in-situ diagnostic to elucidate the nature of HWCVD film growth, particularly as it relates to maximization of photovoltaic device efficiency.",

keywords = "Hot-wire deposition, In-situ, Nanocrystalline silicon, Spectroscopic ellipsometry",

author = "Levi, {D. H.} and Nelson, {B. P.} and E. Iwanizcko and Teplin, {C. W.}",

year = "2004",

doi = "10.1016/j.tsf.2003.11.235",

language = "American English",

volume = "455-456",

pages = "679--683",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

note = "The 3rd International Conference on Spectroscopic Ellipsometry ; Conference date: 06-07-2003 Through 11-07-2003",

}

TY - JOUR

T1 - In-Situ Studies of the Growth of Amorphous and Nanocrystalline Silicon Using Real Time Spectroscopic Ellipsometry

AU - Levi, D. H.

AU - Nelson, B. P.

AU - Iwanizcko, E.

AU - Teplin, C. W.

PY - 2004

Y1 - 2004

N2 - Real-time spectroscopic ellipsometry (RTSE) has been used to characterize the optical and structural properties of hot-wire CVD (HWCVD) deposited amorphous and nanocrystalline silicon as a function of hydrogen dilution, substrate temperature, and gas pressure. Throughout the range of parameters investigated in this three-dimensional parameter space we find good correlations between post-deposition conductivity measurements and the thickness of the film at the transition from amorphous to nanocrystalline growth, as indicated by a smoothening transition in the surface roughness measured by RTSE during film growth. These results validate the use of RTSE as an in-situ diagnostic to elucidate the nature of HWCVD film growth, particularly as it relates to maximization of photovoltaic device efficiency.

AB - Real-time spectroscopic ellipsometry (RTSE) has been used to characterize the optical and structural properties of hot-wire CVD (HWCVD) deposited amorphous and nanocrystalline silicon as a function of hydrogen dilution, substrate temperature, and gas pressure. Throughout the range of parameters investigated in this three-dimensional parameter space we find good correlations between post-deposition conductivity measurements and the thickness of the film at the transition from amorphous to nanocrystalline growth, as indicated by a smoothening transition in the surface roughness measured by RTSE during film growth. These results validate the use of RTSE as an in-situ diagnostic to elucidate the nature of HWCVD film growth, particularly as it relates to maximization of photovoltaic device efficiency.

KW - Hot-wire deposition

KW - In-situ

KW - Nanocrystalline silicon

KW - Spectroscopic ellipsometry

UR - http://www.scopus.com/inward/record.url?scp=17144432934&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2003.11.235

DO - 10.1016/j.tsf.2003.11.235

M3 - Article

AN - SCOPUS:17144432934

SN - 0040-6090

VL - 455-456

SP - 679

EP - 683

JO - Thin Solid Films

JF - Thin Solid Films

T2 - The 3rd International Conference on Spectroscopic Ellipsometry

Y2 - 6 July 2003 through 11 July 2003

ER -

In-Situ Studies of the Growth of Amorphous and Nanocrystalline Silicon Using Real Time Spectroscopic Ellipsometry

Abstract

NREL Publication Number

Keywords

Access to Document

Other files and links

Fingerprint

Cite this