Incorporation of Nitrogen into GaAsN Grown by MOCVD Using Different Precursors

Sarah Kurtz, R. Reedy, Greg D. Barber, J. F. Geisz, D. J. Friedman, W. E. McMahon, J. M. Olson

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30 Scopus Citations


The incorporation of nitrogen into GaAsN grown by metal-organic chemical-vapor deposition is reported as a function of growth conditions and various combinations of nitrogen and gallium precursors. For all of the precursors, the incorporation of nitrogen is increased by decreasing growth temperature and arsine flow and increasing growth rate. NF3 is shown to incorporate nitrogen very much like hydrazine, both of which are more efficient nitrogen sources than u-dimethylhydrazine. The choice of gallium precursor (triethylgallium or trimethylgallium) also affects the nitrogen incorporation. The growth rate of the GaAsN is decreased at low temperatures when trimethylgallium is used and at high temperatures when NF3 is used. Published by Elsevier Science B.V.

Original languageAmerican English
Pages (from-to)318-322
Number of pages5
JournalJournal of Crystal Growth
Issue number2-3
StatePublished - 2002

NREL Publication Number

  • NREL/JA-520-30522


  • A3. Metalorganic chemical vapor deposition
  • A3. Organometallic vapor phase epitaxy
  • B1. Arsenides
  • B1. Gallium compounds
  • B1. Nitrides
  • B2. Semiconducting III-V materials


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