Incorporation of Zinc in MOCVD Growth of Ga0.5In0.5P

Sarah R. Kurtz; J. M. Olson; A. E. Kibbler; K. A. Bertness

doi:10.1016/0022-0248(92)90501-9

Incorporation of Zinc in MOCVD Growth of Ga0.5In0.5P

Sarah R. Kurtz, J. M. Olson, A. E. Kibbler, K. A. Bertness

Materials Science

National Renewable Energy Laboratory

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7 Scopus Citations

Abstract

Data are presented for the Zn doping of Ga_0.5In_0.5P, showing that the hole and zinc concentrations increase almost linearly with zinc flow, and also increase with the V/III ratio and with growth rate at a fixed V/III ratio. These observations are consistent with other reports that show the incorporation of zinc to increase with V/III ratio for both GaAs and Ga_0.5In_0.5P deposition by metalorganic chemical vapor deposition (MOCVD). The growth-rate dependence of the zinc incorporation in Ga_0.5In_0.5P has not previously been reported. A model based on varying group V coverage of the step where zinc is most strongly bound is presented and compared with the data. The model predicts that the zinc incorporation increases with increasing phosphorus overpressure, but should be independent of group III overpressure in the parameter space investigated here.

Original language	American English
Pages (from-to)	463-469
Number of pages	7
Journal	Journal of Crystal Growth
Volume	124
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(92)90501-9
State	Published - 1 Nov 1992

NREL Publication Number

SERI/JA-451-4819

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10.1016/0022-0248(92)90501-9

Cite this

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title = "Incorporation of Zinc in MOCVD Growth of Ga0.5In0.5P",

abstract = "Data are presented for the Zn doping of Ga0.5In0.5P, showing that the hole and zinc concentrations increase almost linearly with zinc flow, and also increase with the V/III ratio and with growth rate at a fixed V/III ratio. These observations are consistent with other reports that show the incorporation of zinc to increase with V/III ratio for both GaAs and Ga0.5In0.5P deposition by metalorganic chemical vapor deposition (MOCVD). The growth-rate dependence of the zinc incorporation in Ga0.5In0.5P has not previously been reported. A model based on varying group V coverage of the step where zinc is most strongly bound is presented and compared with the data. The model predicts that the zinc incorporation increases with increasing phosphorus overpressure, but should be independent of group III overpressure in the parameter space investigated here.",

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T1 - Incorporation of Zinc in MOCVD Growth of Ga0.5In0.5P

AU - Kurtz, Sarah R.

AU - Olson, J. M.

AU - Kibbler, A. E.

AU - Bertness, K. A.

PY - 1992/11/1

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N2 - Data are presented for the Zn doping of Ga0.5In0.5P, showing that the hole and zinc concentrations increase almost linearly with zinc flow, and also increase with the V/III ratio and with growth rate at a fixed V/III ratio. These observations are consistent with other reports that show the incorporation of zinc to increase with V/III ratio for both GaAs and Ga0.5In0.5P deposition by metalorganic chemical vapor deposition (MOCVD). The growth-rate dependence of the zinc incorporation in Ga0.5In0.5P has not previously been reported. A model based on varying group V coverage of the step where zinc is most strongly bound is presented and compared with the data. The model predicts that the zinc incorporation increases with increasing phosphorus overpressure, but should be independent of group III overpressure in the parameter space investigated here.

AB - Data are presented for the Zn doping of Ga0.5In0.5P, showing that the hole and zinc concentrations increase almost linearly with zinc flow, and also increase with the V/III ratio and with growth rate at a fixed V/III ratio. These observations are consistent with other reports that show the incorporation of zinc to increase with V/III ratio for both GaAs and Ga0.5In0.5P deposition by metalorganic chemical vapor deposition (MOCVD). The growth-rate dependence of the zinc incorporation in Ga0.5In0.5P has not previously been reported. A model based on varying group V coverage of the step where zinc is most strongly bound is presented and compared with the data. The model predicts that the zinc incorporation increases with increasing phosphorus overpressure, but should be independent of group III overpressure in the parameter space investigated here.

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ER -

Incorporation of Zinc in MOCVD Growth of Ga0.5In0.5P

Abstract

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