Indium Phosphide Films for Photovoltaic Devices

T. L. Chu; Shirley S. Chu; C. L. Lin; C. T. Chang; Y. C. Tzeng; A. B. Kuper; L. L. Kazmerski; P. J. Ireland

Indium Phosphide Films for Photovoltaic Devices

T. L. Chu, Shirley S. Chu, C. L. Lin, C. T. Chang, Y. C. Tzeng, A. B. Kuper, L. L. Kazmerski, P. J. Ireland

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Research output: Contribution to conference › Paper › peer-review

4 Scopus Citations

Abstract

Indium phosphide, a direct gap semiconductor with a room temperature energy gap of 1. 35 eV, is a promising photovoltaic material for thin film devices. Thin films of indium phosphide have been deposited on several foreign substrates by the halide process, and their structural and electrical properties investigated. Schottky barriers prepared from these films are found to exhibit low rectification ratios, high dark currents, and poor photovoltaic response due to grain boundary effects.

Original language	American English
Pages	661-666
Number of pages	6
State	Published - 1980
Externally published	Yes
Event	Conf Rec IEEE Photovoltaic Spec Conf 14th - San Diego, CA, USA Duration: 7 Jan 1980 → 10 Jan 1980

Conference

Conference	Conf Rec IEEE Photovoltaic Spec Conf 14th
City	San Diego, CA, USA
Period	7/01/80 → 10/01/80

NREL Publication Number

ACNR/CP-213-4184

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@conference{233c28259bed496eba3ce38825ff3ac7,

title = "Indium Phosphide Films for Photovoltaic Devices",

abstract = "Indium phosphide, a direct gap semiconductor with a room temperature energy gap of 1. 35 eV, is a promising photovoltaic material for thin film devices. Thin films of indium phosphide have been deposited on several foreign substrates by the halide process, and their structural and electrical properties investigated. Schottky barriers prepared from these films are found to exhibit low rectification ratios, high dark currents, and poor photovoltaic response due to grain boundary effects.",

author = "Chu, {T. L.} and Chu, {Shirley S.} and Lin, {C. L.} and Chang, {C. T.} and Tzeng, {Y. C.} and Kuper, {A. B.} and Kazmerski, {L. L.} and Ireland, {P. J.}",

year = "1980",

language = "American English",

pages = "661--666",

note = "Conf Rec IEEE Photovoltaic Spec Conf 14th ; Conference date: 07-01-1980 Through 10-01-1980",

}

TY - CONF

T1 - Indium Phosphide Films for Photovoltaic Devices

AU - Chu, T. L.

AU - Chu, Shirley S.

AU - Lin, C. L.

AU - Chang, C. T.

AU - Tzeng, Y. C.

AU - Kuper, A. B.

AU - Kazmerski, L. L.

AU - Ireland, P. J.

PY - 1980

Y1 - 1980

N2 - Indium phosphide, a direct gap semiconductor with a room temperature energy gap of 1. 35 eV, is a promising photovoltaic material for thin film devices. Thin films of indium phosphide have been deposited on several foreign substrates by the halide process, and their structural and electrical properties investigated. Schottky barriers prepared from these films are found to exhibit low rectification ratios, high dark currents, and poor photovoltaic response due to grain boundary effects.

AB - Indium phosphide, a direct gap semiconductor with a room temperature energy gap of 1. 35 eV, is a promising photovoltaic material for thin film devices. Thin films of indium phosphide have been deposited on several foreign substrates by the halide process, and their structural and electrical properties investigated. Schottky barriers prepared from these films are found to exhibit low rectification ratios, high dark currents, and poor photovoltaic response due to grain boundary effects.

UR - http://www.scopus.com/inward/record.url?scp=0018920233&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0018920233

SP - 661

EP - 666

T2 - Conf Rec IEEE Photovoltaic Spec Conf 14th

Y2 - 7 January 1980 through 10 January 1980

ER -

Indium Phosphide Films for Photovoltaic Devices

Abstract

Conference

NREL Publication Number

UN SDGs

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