Indium Phosphide Films for Photovoltaic Devices

T. L. Chu, Shirley S. Chu, C. L. Lin, C. T. Chang, Y. C. Tzeng, A. B. Kuper, L. L. Kazmerski, P. J. Ireland

Research output: Contribution to conferencePaperpeer-review

4 Scopus Citations


Indium phosphide, a direct gap semiconductor with a room temperature energy gap of 1. 35 eV, is a promising photovoltaic material for thin film devices. Thin films of indium phosphide have been deposited on several foreign substrates by the halide process, and their structural and electrical properties investigated. Schottky barriers prepared from these films are found to exhibit low rectification ratios, high dark currents, and poor photovoltaic response due to grain boundary effects.

Original languageAmerican English
Number of pages6
StatePublished - 1980
Externally publishedYes
EventConf Rec IEEE Photovoltaic Spec Conf 14th - San Diego, CA, USA
Duration: 7 Jan 198010 Jan 1980


ConferenceConf Rec IEEE Photovoltaic Spec Conf 14th
CitySan Diego, CA, USA

NREL Publication Number

  • ACNR/CP-213-4184


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