Individual Electron and Hole Mobilities in Lead-Halide Perovskites Revealed by Noncontact Methods

Matthew Beard; Yaxin Zhai; Kang Wang; Fei Zhang; Chuanxiao Xiao; Aaron Rose; Kai Zhu

doi:10.1021/acsenergylett.9b02310

Individual Electron and Hole Mobilities in Lead-Halide Perovskites Revealed by Noncontact Methods

Matthew Beard, Yaxin Zhai, Kang Wang, Fei Zhang, Chuanxiao Xiao, Aaron Rose, Kai Zhu

Research output: Contribution to journal › Article › peer-review

47 Scopus Citations

Abstract

Charge carrier mobilities help determine semiconductor performance in optoelectronic applications, but measurement of the individual electron and hole mobilities usually involves indirect methods or probes with electrical contacts that are influenced by the quality of the interface or contact. Here, a noncontact method is introduced to distinguish the mobilities of electrons and holes by combining time-resolved terahertz spectroscopy (TRTS) and optical transient reflection (TR) spectroscopy. The validation of this method is first demonstrated on a semi-insulator GaAs wafer, and then, three lead-halide perovskite polycrystalline films with different cation mixtures are studied. We find that the hole mobility is significantly higher (∼10×) than that of the electron mobility in all of the perovskite thin films studied. The highly alloyed triple cation polycrystalline film shows the highest mobility, longest bulk carrier lifetime, and lowest surface recombination velocity.

Original language	American English
Pages (from-to)	47-55
Number of pages	9
Journal	ACS Energy Letters
Volume	5
Issue number	1
DOIs	https://doi.org/10.1021/acsenergylett.9b02310 https://doi.org/10.1021/acsenergylett.9b02310
State	Published - 10 Jan 2020

Bibliographical note

Publisher Copyright:
© 2019 American Chemical Society.

NREL Publication Number

NREL/JA-5900-74898

Keywords

carrier mobility
perovskite thin films
THz

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title = "Individual Electron and Hole Mobilities in Lead-Halide Perovskites Revealed by Noncontact Methods",

abstract = "Charge carrier mobilities help determine semiconductor performance in optoelectronic applications, but measurement of the individual electron and hole mobilities usually involves indirect methods or probes with electrical contacts that are influenced by the quality of the interface or contact. Here, a noncontact method is introduced to distinguish the mobilities of electrons and holes by combining time-resolved terahertz spectroscopy (TRTS) and optical transient reflection (TR) spectroscopy. The validation of this method is first demonstrated on a semi-insulator GaAs wafer, and then, three lead-halide perovskite polycrystalline films with different cation mixtures are studied. We find that the hole mobility is significantly higher (∼10×) than that of the electron mobility in all of the perovskite thin films studied. The highly alloyed triple cation polycrystalline film shows the highest mobility, longest bulk carrier lifetime, and lowest surface recombination velocity.",

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AU - Beard, Matthew

AU - Zhai, Yaxin

AU - Wang, Kang

AU - Zhang, Fei

AU - Xiao, Chuanxiao

AU - Rose, Aaron

AU - Zhu, Kai

PY - 2020/1/10

Y1 - 2020/1/10

N2 - Charge carrier mobilities help determine semiconductor performance in optoelectronic applications, but measurement of the individual electron and hole mobilities usually involves indirect methods or probes with electrical contacts that are influenced by the quality of the interface or contact. Here, a noncontact method is introduced to distinguish the mobilities of electrons and holes by combining time-resolved terahertz spectroscopy (TRTS) and optical transient reflection (TR) spectroscopy. The validation of this method is first demonstrated on a semi-insulator GaAs wafer, and then, three lead-halide perovskite polycrystalline films with different cation mixtures are studied. We find that the hole mobility is significantly higher (∼10×) than that of the electron mobility in all of the perovskite thin films studied. The highly alloyed triple cation polycrystalline film shows the highest mobility, longest bulk carrier lifetime, and lowest surface recombination velocity.

AB - Charge carrier mobilities help determine semiconductor performance in optoelectronic applications, but measurement of the individual electron and hole mobilities usually involves indirect methods or probes with electrical contacts that are influenced by the quality of the interface or contact. Here, a noncontact method is introduced to distinguish the mobilities of electrons and holes by combining time-resolved terahertz spectroscopy (TRTS) and optical transient reflection (TR) spectroscopy. The validation of this method is first demonstrated on a semi-insulator GaAs wafer, and then, three lead-halide perovskite polycrystalline films with different cation mixtures are studied. We find that the hole mobility is significantly higher (∼10×) than that of the electron mobility in all of the perovskite thin films studied. The highly alloyed triple cation polycrystalline film shows the highest mobility, longest bulk carrier lifetime, and lowest surface recombination velocity.

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Individual Electron and Hole Mobilities in Lead-Halide Perovskites Revealed by Noncontact Methods

Abstract

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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