Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

    Research output: Contribution to conferencePaper

    Abstract

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350 deg. C and completely recrystallized after the same treatment at 400 deg. C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that themechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.
    Original languageAmerican English
    Number of pages9
    StatePublished - 1998
    EventNational Center for Photovoltaics Program Review Meeting - Denver, Colorado
    Duration: 8 Sep 199811 Sep 1998

    Conference

    ConferenceNational Center for Photovoltaics Program Review Meeting
    CityDenver, Colorado
    Period8/09/9811/09/98

    NREL Publication Number

    • NREL/CP-520-25635

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