Abstract
We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350 deg. C and completely recrystallized after the same treatment at 400 deg. C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that themechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.
Original language | American English |
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Number of pages | 9 |
State | Published - 1998 |
Event | National Center for Photovoltaics Program Review Meeting - Denver, Colorado Duration: 8 Sep 1998 → 11 Sep 1998 |
Conference
Conference | National Center for Photovoltaics Program Review Meeting |
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City | Denver, Colorado |
Period | 8/09/98 → 11/09/98 |
NREL Publication Number
- NREL/CP-520-25635