Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

Research output: Contribution to conferencePaper

Abstract

We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350 deg. C and completely recrystallized after the same treatment at 400 deg. C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that themechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.
Original languageAmerican English
Number of pages9
StatePublished - 1998
EventAmerican Vacuum Society National Meeting - Baltimore, Maryland
Duration: 2 Nov 19986 Nov 1998

Conference

ConferenceAmerican Vacuum Society National Meeting
CityBaltimore, Maryland
Period2/11/986/11/98

NREL Publication Number

  • NREL/CP-520-25782

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