Influence of CdS/CdTe Interface Properties on the Device Properties

R. Dhere; D. Rose; D. Albin; S. Asher; M. Al-Jassim; H. Cheong; A. Swartzlander; H. Moutinho; T. Coutts; R. Ribelin; P. Sheldon

doi:10.1109/PVSC.1997.654121

Influence of CdS/CdTe Interface Properties on the Device Properties

R. Dhere, D. Rose, D. Albin, S. Asher, M. Al-Jassim, H. Cheong, A. Swartzlander, H. Moutinho, T. Coutts, R. Ribelin, P. Sheldon

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

38 Scopus Citations

Abstract

In this paper, we have focused on the formation and the role of the CdS/CdTe interface on CdTe solar cells. The devices were made using chemical bath deposited (CBD) CdS on SnO₂/glass substrates and the CdTe was deposited by close spaced sublimation (CSS) and subsequently CdCl₂ treated and annealed. Compositional analysis showed considerable interdiffusion of Te and S as well as Cl accumulation at the interface. Micro-photoluminescence (PL) analysis reveals sulfur accumulation at the grain boundaries and a graded CdS_xTe_1-x alloy at the interface. Our analysis leads us to conclude that Cl accumulation and anion vacancies result in a one sided n⁺-p junction. This model could explain the collection loss in the CdS layer, seen in the spectral response of CdS/CdTe devices.

Original language	American English
Pages	435-438
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1997.654121
State	Published - 1997
Event	Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference
City	Anaheim, CA, USA
Period	29/09/97 → 3/10/97

Bibliographical note

For preprint version, including full text online document, see NREL/CP-520-22947

NREL Publication Number

NREL/CP-520-25051

Access to Document

10.1109/PVSC.1997.654121

Cite this

Dhere, R., Rose, D., Albin, D., Asher, S., Al-Jassim, M., Cheong, H., Swartzlander, A., Moutinho, H., Coutts, T., Ribelin, R., & Sheldon, P. (1997). Influence of CdS/CdTe Interface Properties on the Device Properties. 435-438. Paper presented at Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference, Anaheim, CA, USA. https://doi.org/10.1109/PVSC.1997.654121

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title = "Influence of CdS/CdTe Interface Properties on the Device Properties",

abstract = "In this paper, we have focused on the formation and the role of the CdS/CdTe interface on CdTe solar cells. The devices were made using chemical bath deposited (CBD) CdS on SnO2/glass substrates and the CdTe was deposited by close spaced sublimation (CSS) and subsequently CdCl2 treated and annealed. Compositional analysis showed considerable interdiffusion of Te and S as well as Cl accumulation at the interface. Micro-photoluminescence (PL) analysis reveals sulfur accumulation at the grain boundaries and a graded CdSxTe1-x alloy at the interface. Our analysis leads us to conclude that Cl accumulation and anion vacancies result in a one sided n+-p junction. This model could explain the collection loss in the CdS layer, seen in the spectral response of CdS/CdTe devices.",

author = "R. Dhere and D. Rose and D. Albin and S. Asher and M. Al-Jassim and H. Cheong and A. Swartzlander and H. Moutinho and T. Coutts and R. Ribelin and P. Sheldon",

note = "For preprint version, including full text online document, see NREL/CP-520-22947; Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

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doi = "10.1109/PVSC.1997.654121",

language = "American English",

pages = "435--438",

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Dhere, R, Rose, D, Albin, D, Asher, S, Al-Jassim, M, Cheong, H, Swartzlander, A, Moutinho, H, Coutts, T, Ribelin, R & Sheldon, P 1997, 'Influence of CdS/CdTe Interface Properties on the Device Properties', Paper presented at Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference, Anaheim, CA, USA, 29/09/97 - 3/10/97 pp. 435-438. https://doi.org/10.1109/PVSC.1997.654121

TY - CONF

T1 - Influence of CdS/CdTe Interface Properties on the Device Properties

AU - Dhere, R.

AU - Rose, D.

AU - Albin, D.

AU - Asher, S.

AU - Al-Jassim, M.

AU - Cheong, H.

AU - Swartzlander, A.

AU - Moutinho, H.

AU - Coutts, T.

AU - Ribelin, R.

AU - Sheldon, P.

N1 - For preprint version, including full text online document, see NREL/CP-520-22947

PY - 1997

Y1 - 1997

N2 - In this paper, we have focused on the formation and the role of the CdS/CdTe interface on CdTe solar cells. The devices were made using chemical bath deposited (CBD) CdS on SnO2/glass substrates and the CdTe was deposited by close spaced sublimation (CSS) and subsequently CdCl2 treated and annealed. Compositional analysis showed considerable interdiffusion of Te and S as well as Cl accumulation at the interface. Micro-photoluminescence (PL) analysis reveals sulfur accumulation at the grain boundaries and a graded CdSxTe1-x alloy at the interface. Our analysis leads us to conclude that Cl accumulation and anion vacancies result in a one sided n+-p junction. This model could explain the collection loss in the CdS layer, seen in the spectral response of CdS/CdTe devices.

AB - In this paper, we have focused on the formation and the role of the CdS/CdTe interface on CdTe solar cells. The devices were made using chemical bath deposited (CBD) CdS on SnO2/glass substrates and the CdTe was deposited by close spaced sublimation (CSS) and subsequently CdCl2 treated and annealed. Compositional analysis showed considerable interdiffusion of Te and S as well as Cl accumulation at the interface. Micro-photoluminescence (PL) analysis reveals sulfur accumulation at the grain boundaries and a graded CdSxTe1-x alloy at the interface. Our analysis leads us to conclude that Cl accumulation and anion vacancies result in a one sided n+-p junction. This model could explain the collection loss in the CdS layer, seen in the spectral response of CdS/CdTe devices.

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U2 - 10.1109/PVSC.1997.654121

DO - 10.1109/PVSC.1997.654121

M3 - Paper

AN - SCOPUS:0031363777

SP - 435

EP - 438

T2 - Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Influence of CdS/CdTe Interface Properties on the Device Properties

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