Influence of CdS/CdTe Interface Properties on the Device Properties

R. Dhere, D. Rose, D. Albin, S. Asher, M. Al-Jassim, H. Cheong, A. Swartzlander, H. Moutinho, T. Coutts, R. Ribelin, P. Sheldon

Research output: Contribution to conferencePaperpeer-review

38 Scopus Citations


In this paper, we have focused on the formation and the role of the CdS/CdTe interface on CdTe solar cells. The devices were made using chemical bath deposited (CBD) CdS on SnO2/glass substrates and the CdTe was deposited by close spaced sublimation (CSS) and subsequently CdCl2 treated and annealed. Compositional analysis showed considerable interdiffusion of Te and S as well as Cl accumulation at the interface. Micro-photoluminescence (PL) analysis reveals sulfur accumulation at the grain boundaries and a graded CdSxTe1-x alloy at the interface. Our analysis leads us to conclude that Cl accumulation and anion vacancies result in a one sided n+-p junction. This model could explain the collection loss in the CdS layer, seen in the spectral response of CdS/CdTe devices.

Original languageAmerican English
Number of pages4
StatePublished - 1997
EventProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA
Duration: 29 Sep 19973 Oct 1997


ConferenceProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference
CityAnaheim, CA, USA

Bibliographical note

For preprint version, including full text online document, see NREL/CP-520-22947

NREL Publication Number

  • NREL/CP-520-25051


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