Abstract
In this paper, we have focused on the formation and the role of CdS/CdTe interface on CdTe solar cells. The devices were made using chemical bath deposited (CBD) CdS on SnO2 /glass substrates and the CdTe was deposited by close spaced sublimation (CSS). CdTe was treated with CdCl2 : known to be a key processing parameter. Compositional analysis showed considerable interdiffusion of Te and S aswell as Cl ; accumulation at the interface. Micro-photoluminescence (PL) analysis reveals sulfur accumulation at the grain boundaries and a graded; CdSxTe1-x alloy at the interface. Our analysis leads us to conclude that Cl accumulation and anion vacancies result in a one sided n+-p junction. This model could explain the collection loss in the CdS layer, seen in the; spectral response ofCdS/CdTe devices.
| Original language | American English |
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| Number of pages | 5 |
| State | Published - 1997 |
| Event | 26th IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997 |
Conference
| Conference | 26th IEEE Photovoltaic Specialists Conference |
|---|---|
| City | Anaheim, California |
| Period | 29/09/97 → 3/10/97 |
NREL Publication Number
- NREL/CP-520-22947