Influence of CdS/CdTe Interface Properties on the Device Properties

    Research output: Contribution to conferencePaper


    In this paper, we have focused on the formation and the role of CdS/CdTe interface on CdTe solar cells. The devices were made using chemical bath deposited (CBD) CdS on SnO2 /glass substrates and the CdTe was deposited by close spaced sublimation (CSS). CdTe was treated with CdCl2 : known to be a key processing parameter. Compositional analysis showed considerable interdiffusion of Te and S aswell as Cl ; accumulation at the interface. Micro-photoluminescence (PL) analysis reveals sulfur accumulation at the grain boundaries and a graded; CdSxTe1-x alloy at the interface. Our analysis leads us to conclude that Cl accumulation and anion vacancies result in a one sided n+-p junction. This model could explain the collection loss in the CdS layer, seen in the; spectral response ofCdS/CdTe devices.
    Original languageAmerican English
    Number of pages5
    StatePublished - 1997
    Event26th IEEE Photovoltaic Specialists Conference - Anaheim, California
    Duration: 29 Sep 19973 Oct 1997


    Conference26th IEEE Photovoltaic Specialists Conference
    CityAnaheim, California

    NREL Publication Number

    • NREL/CP-520-22947


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