Influence of CdS/CdTe Interface Properties on the Device Properties

Research output: Contribution to conferencePaper

Abstract

In this paper, we have focused on the formation and the role of CdS/CdTe interface on CdTe solar cells. The devices were made using chemical bath deposited (CBD) CdS on SnO2 /glass substrates and the CdTe was deposited by close spaced sublimation (CSS). CdTe was treated with CdCl2 : known to be a key processing parameter. Compositional analysis showed considerable interdiffusion of Te and S aswell as Cl ; accumulation at the interface. Micro-photoluminescence (PL) analysis reveals sulfur accumulation at the grain boundaries and a graded; CdSxTe1-x alloy at the interface. Our analysis leads us to conclude that Cl accumulation and anion vacancies result in a one sided n+-p junction. This model could explain the collection loss in the CdS layer, seen in the; spectral response ofCdS/CdTe devices.
Original languageAmerican English
Number of pages5
StatePublished - 1997
Event26th IEEE Photovoltaic Specialists Conference - Anaheim, California
Duration: 29 Sep 19973 Oct 1997

Conference

Conference26th IEEE Photovoltaic Specialists Conference
CityAnaheim, California
Period29/09/973/10/97

NREL Publication Number

  • NREL/CP-520-22947

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