Influence of Defects and Defect Distributions in Multicrystalline Silicon on Solar Cell Performance

B. Sopori, P. Rupnowski, S. Shet, V. Budhraja, N. Call, S. Johnston, M. Seacrist, G. Shi, J. Chen, A. Deshpande

Research output: Contribution to conferencePaperpeer-review

4 Scopus Citations

Abstract

We describe results of our theoretical and experimental studies performed to investigate the influence of defects and defect distributions in multicrystalline silicon (mc-Si) wafers on the solar cell's performance. Dislocation distributions were measured on wafers from various bricks of a mc-Si ingot. Solar cells were fabricated on sister wafers and characterized by a variety of methods. Cell performance can be accurately predicted from dislocation distribution of a mc-Si wafer using local N/P junction characteristics in a distributed network model. This analysis is applied to investigate changes in cell performance caused by dislocation propagation within a brick of mc-Si ingot. The theoretical results agree well with the measured performance of cells fabricated on wafers taken from different places in a brick.

Original languageAmerican English
Pages2233-2237
Number of pages5
DOIs
StatePublished - 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: 20 Jun 201025 Jun 2010

Conference

Conference35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/TerritoryUnited States
CityHonolulu, HI
Period20/06/1025/06/10

NREL Publication Number

  • NREL/CP-520-47729

Keywords

  • cell efficiency
  • defect distribution
  • device performance
  • solar cells

Fingerprint

Dive into the research topics of 'Influence of Defects and Defect Distributions in Multicrystalline Silicon on Solar Cell Performance'. Together they form a unique fingerprint.

Cite this