Influence of Ga Concentration on the Ordering Process of GaxIn1-xP Grown on GaAs: Article No. 716

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Original language	American English
Pages (from-to)	716-719
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	32
Issue number	Suppl. 32-3
DOIs	https://doi.org/10.7567/JJAPS.32S3.716
State	Published - 1993

NLR Publication Number

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title = "Influence of Ga Concentration on the Ordering Process of GaxIn1-xP Grown on GaAs: Article No. 716",

keywords = "lattice, ordering, photoluminescence",

author = "NREL",

year = "1993",

doi = "10.7567/JJAPS.32S3.716",

language = "American English",

volume = "32",

pages = "716--719",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "Suppl. 32-3",

}

TY - JOUR

T1 - Influence of Ga Concentration on the Ordering Process of GaxIn1-xP Grown on GaAs

T2 - Article No. 716

AU - NREL, null

PY - 1993

Y1 - 1993

KW - lattice

KW - ordering

KW - photoluminescence

U2 - 10.7567/JJAPS.32S3.716

DO - 10.7567/JJAPS.32S3.716

M3 - Article

SN - 0021-4922

VL - 32

SP - 716

EP - 719

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - Suppl. 32-3

ER -