Influence of Gas Ambient on the Synthesis of Co-Doped ZnO:(Al,N) Films for Photoelectrochemical Water Splitting

Sudhakar Shet; Kwang Soon Ahn; Todd Deutsch; Heli Wang; Ravindra Nuggehalli; Yanfa Yan; John Turner; Mowafak Al-Jassim

doi:10.1016/j.jpowsour.2010.03.058

Influence of Gas Ambient on the Synthesis of Co-Doped ZnO:(Al,N) Films for Photoelectrochemical Water Splitting

Sudhakar Shet, Kwang Soon Ahn, Todd Deutsch, Heli Wang, Ravindra Nuggehalli, Yanfa Yan, John Turner, Mowafak Al-Jassim

Research output: Contribution to journal › Article › peer-review

62 Scopus Citations

Abstract

Al and N co-doped ZnO thin films, ZnO:(Al,N), are synthesized by radio-frequency magnetron sputtering in mixed Ar and N₂ and mixed O₂ and N₂ gas ambient at 100 °C. The ZnO:(Al,N) films deposited in mixed Ar and N₂ gas ambient did not incorporate N, whereas ZnO:(Al,N) films grown in mixed O₂ and N₂ gas ambient showed enhanced N incorporation and crystallinity as compared to ZnO:N thin films grown in the same gas ambient. As a result, ZnO:(Al,N) films grown in mixed O₂ and N₂ gas ambient showed higher photocurrents than the ZnO:(Al,N) thin films deposited in mixed Ar and N₂ gas ambient. Our results indicate that the gas ambient plays an important role in N incorporation and crystallinity control in Al and N co-doped ZnO thin films.

Original language	American English
Pages (from-to)	5801-5805
Number of pages	5
Journal	Journal of Power Sources
Volume	195
Issue number	17
DOIs	https://doi.org/10.1016/j.jpowsour.2010.03.058 https://doi.org/10.1016/j.jpowsour.2010.03.058
State	Published - 2010

NREL Publication Number

NREL/JA-520-45947

Keywords

Bandgap
Co-doping
Gas ambient
Photoelectrochemical
ZnO
ZnO:(Al,N)

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@article{5a6efb859d0c483ebbfaffecfb907137,

title = "Influence of Gas Ambient on the Synthesis of Co-Doped ZnO:(Al,N) Films for Photoelectrochemical Water Splitting",

abstract = "Al and N co-doped ZnO thin films, ZnO:(Al,N), are synthesized by radio-frequency magnetron sputtering in mixed Ar and N2 and mixed O2 and N2 gas ambient at 100 °C. The ZnO:(Al,N) films deposited in mixed Ar and N2 gas ambient did not incorporate N, whereas ZnO:(Al,N) films grown in mixed O2 and N2 gas ambient showed enhanced N incorporation and crystallinity as compared to ZnO:N thin films grown in the same gas ambient. As a result, ZnO:(Al,N) films grown in mixed O2 and N2 gas ambient showed higher photocurrents than the ZnO:(Al,N) thin films deposited in mixed Ar and N2 gas ambient. Our results indicate that the gas ambient plays an important role in N incorporation and crystallinity control in Al and N co-doped ZnO thin films.",

keywords = "Bandgap, Co-doping, Gas ambient, Photoelectrochemical, ZnO, ZnO:(Al,N)",

author = "Sudhakar Shet and Ahn, {Kwang Soon} and Todd Deutsch and Heli Wang and Ravindra Nuggehalli and Yanfa Yan and John Turner and Mowafak Al-Jassim",

year = "2010",

doi = "10.1016/j.jpowsour.2010.03.058",

language = "American English",

volume = "195",

pages = "5801--5805",

journal = "Journal of Power Sources",

issn = "0378-7753",

publisher = "Elsevier B.V.",

number = "17",

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TY - JOUR

T1 - Influence of Gas Ambient on the Synthesis of Co-Doped ZnO:(Al,N) Films for Photoelectrochemical Water Splitting

AU - Shet, Sudhakar

AU - Ahn, Kwang Soon

AU - Deutsch, Todd

AU - Wang, Heli

AU - Nuggehalli, Ravindra

AU - Yan, Yanfa

AU - Turner, John

AU - Al-Jassim, Mowafak

PY - 2010

Y1 - 2010

N2 - Al and N co-doped ZnO thin films, ZnO:(Al,N), are synthesized by radio-frequency magnetron sputtering in mixed Ar and N2 and mixed O2 and N2 gas ambient at 100 °C. The ZnO:(Al,N) films deposited in mixed Ar and N2 gas ambient did not incorporate N, whereas ZnO:(Al,N) films grown in mixed O2 and N2 gas ambient showed enhanced N incorporation and crystallinity as compared to ZnO:N thin films grown in the same gas ambient. As a result, ZnO:(Al,N) films grown in mixed O2 and N2 gas ambient showed higher photocurrents than the ZnO:(Al,N) thin films deposited in mixed Ar and N2 gas ambient. Our results indicate that the gas ambient plays an important role in N incorporation and crystallinity control in Al and N co-doped ZnO thin films.

AB - Al and N co-doped ZnO thin films, ZnO:(Al,N), are synthesized by radio-frequency magnetron sputtering in mixed Ar and N2 and mixed O2 and N2 gas ambient at 100 °C. The ZnO:(Al,N) films deposited in mixed Ar and N2 gas ambient did not incorporate N, whereas ZnO:(Al,N) films grown in mixed O2 and N2 gas ambient showed enhanced N incorporation and crystallinity as compared to ZnO:N thin films grown in the same gas ambient. As a result, ZnO:(Al,N) films grown in mixed O2 and N2 gas ambient showed higher photocurrents than the ZnO:(Al,N) thin films deposited in mixed Ar and N2 gas ambient. Our results indicate that the gas ambient plays an important role in N incorporation and crystallinity control in Al and N co-doped ZnO thin films.

KW - Bandgap

KW - Co-doping

KW - Gas ambient

KW - Photoelectrochemical

KW - ZnO

KW - ZnO:(Al,N)

UR - http://www.scopus.com/inward/record.url?scp=77953130330&partnerID=8YFLogxK

U2 - 10.1016/j.jpowsour.2010.03.058

DO - 10.1016/j.jpowsour.2010.03.058

M3 - Article

AN - SCOPUS:77953130330

SN - 0378-7753

VL - 195

SP - 5801

EP - 5805

JO - Journal of Power Sources

JF - Journal of Power Sources

IS - 17

ER -

Influence of Gas Ambient on the Synthesis of Co-Doped ZnO:(Al,N) Films for Photoelectrochemical Water Splitting

Abstract

NREL Publication Number

Keywords

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