Influence of Gas Flow Rate on the Formation of ZnO Nanorods and Their Effects on Photoelectrochemical Response

Sudhakar Shet; Kwang Soon Ahn; Ravindra Nuggehalli; Yanfa Yan; Todd Deutsch; John Turner; Mowafak Al-Jassim

doi:10.1002/9780470930991.ch25

Influence of Gas Flow Rate on the Formation of ZnO Nanorods and Their Effects on Photoelectrochemical Response

Sudhakar Shet, Kwang Soon Ahn, Ravindra Nuggehalli, Yanfa Yan, Todd Deutsch, John Turner, Mowafak Al-Jassim

Research output: Contribution to conference › Paper › peer-review

Abstract

ZnO thin films are deposited in pure Ar and mixed Ar and N₂ gas ambient at substrate temperature of 500°C by rf sputtering ZnO targets. All the films were deposited on fluorine doped tin oxide coated glass. We find that the presence of optimum N₂ to Ar ratio in the deposition ambient promotes the formation of well aligned ZnO nanorods. ZnO thin films grown at 25 % N₂ gas flow rate promoted aligned nanorods along c-axis exhibit significantly enhanced photoelectrochemical response, as compared to ZnO thin films grown at other N₂ to Ar gas flow ratios. Our results suggest that chamber ambient is very important for the formation of aligned nanostructures, which offer potential advantages for improving the efficiency of photoelectrochemical water splitting for H₂ production.

Original language	American English
Pages	267-274
Number of pages	8
DOIs	https://doi.org/10.1002/9780470930991.ch25 https://doi.org/10.1002/9780470930991.ch25
State	Published - 2009
Event	Materials Science and Technology 2009 Conference and Exhibition (MS&T09) - Pittsburgh, Pennsylvania Duration: 25 Oct 2009 → 29 Oct 2009

Conference

Conference	Materials Science and Technology 2009 Conference and Exhibition (MS&T09)
City	Pittsburgh, Pennsylvania
Period	25/10/09 → 29/10/09

NREL Publication Number

NREL/CP-5200-50234

Keywords

H2 production
photoelectrochemical process
water splitting

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Shet, S., Ahn, K. S., Nuggehalli, R., Yan, Y., Deutsch, T., Turner, J., & Al-Jassim, M. (2009). Influence of Gas Flow Rate on the Formation of ZnO Nanorods and Their Effects on Photoelectrochemical Response. 267-274. Paper presented at Materials Science and Technology 2009 Conference and Exhibition (MS&T09), Pittsburgh, Pennsylvania. https://doi.org/10.1002/9780470930991.ch25, https://doi.org/10.1002/9780470930991.ch25

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title = "Influence of Gas Flow Rate on the Formation of ZnO Nanorods and Their Effects on Photoelectrochemical Response",

abstract = "ZnO thin films are deposited in pure Ar and mixed Ar and N2 gas ambient at substrate temperature of 500°C by rf sputtering ZnO targets. All the films were deposited on fluorine doped tin oxide coated glass. We find that the presence of optimum N2 to Ar ratio in the deposition ambient promotes the formation of well aligned ZnO nanorods. ZnO thin films grown at 25 % N2 gas flow rate promoted aligned nanorods along c-axis exhibit significantly enhanced photoelectrochemical response, as compared to ZnO thin films grown at other N2 to Ar gas flow ratios. Our results suggest that chamber ambient is very important for the formation of aligned nanostructures, which offer potential advantages for improving the efficiency of photoelectrochemical water splitting for H2 production.",

keywords = "H2 production, photoelectrochemical process, water splitting",

author = "Sudhakar Shet and Ahn, {Kwang Soon} and Ravindra Nuggehalli and Yanfa Yan and Todd Deutsch and John Turner and Mowafak Al-Jassim",

year = "2009",

doi = "10.1002/9780470930991.ch25",

language = "American English",

pages = "267--274",

note = "Materials Science and Technology 2009 Conference and Exhibition (MS&T09) ; Conference date: 25-10-2009 Through 29-10-2009",

}

Shet, S, Ahn, KS, Nuggehalli, R, Yan, Y, Deutsch, T , Turner, J & Al-Jassim, M 2009, 'Influence of Gas Flow Rate on the Formation of ZnO Nanorods and Their Effects on Photoelectrochemical Response', Paper presented at Materials Science and Technology 2009 Conference and Exhibition (MS&T09), Pittsburgh, Pennsylvania, 25/10/09 - 29/10/09 pp. 267-274. https://doi.org/10.1002/9780470930991.ch25, https://doi.org/10.1002/9780470930991.ch25

Influence of Gas Flow Rate on the Formation of ZnO Nanorods and Their Effects on Photoelectrochemical Response. / Shet, Sudhakar; Ahn, Kwang Soon; Nuggehalli, Ravindra et al.
2009. 267-274 Paper presented at Materials Science and Technology 2009 Conference and Exhibition (MS&T09), Pittsburgh, Pennsylvania.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Influence of Gas Flow Rate on the Formation of ZnO Nanorods and Their Effects on Photoelectrochemical Response

AU - Shet, Sudhakar

AU - Ahn, Kwang Soon

AU - Nuggehalli, Ravindra

AU - Yan, Yanfa

AU - Deutsch, Todd

AU - Turner, John

AU - Al-Jassim, Mowafak

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N2 - ZnO thin films are deposited in pure Ar and mixed Ar and N2 gas ambient at substrate temperature of 500°C by rf sputtering ZnO targets. All the films were deposited on fluorine doped tin oxide coated glass. We find that the presence of optimum N2 to Ar ratio in the deposition ambient promotes the formation of well aligned ZnO nanorods. ZnO thin films grown at 25 % N2 gas flow rate promoted aligned nanorods along c-axis exhibit significantly enhanced photoelectrochemical response, as compared to ZnO thin films grown at other N2 to Ar gas flow ratios. Our results suggest that chamber ambient is very important for the formation of aligned nanostructures, which offer potential advantages for improving the efficiency of photoelectrochemical water splitting for H2 production.

AB - ZnO thin films are deposited in pure Ar and mixed Ar and N2 gas ambient at substrate temperature of 500°C by rf sputtering ZnO targets. All the films were deposited on fluorine doped tin oxide coated glass. We find that the presence of optimum N2 to Ar ratio in the deposition ambient promotes the formation of well aligned ZnO nanorods. ZnO thin films grown at 25 % N2 gas flow rate promoted aligned nanorods along c-axis exhibit significantly enhanced photoelectrochemical response, as compared to ZnO thin films grown at other N2 to Ar gas flow ratios. Our results suggest that chamber ambient is very important for the formation of aligned nanostructures, which offer potential advantages for improving the efficiency of photoelectrochemical water splitting for H2 production.

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KW - photoelectrochemical process

KW - water splitting

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T2 - Materials Science and Technology 2009 Conference and Exhibition (MS&T09)

Y2 - 25 October 2009 through 29 October 2009

ER -

Influence of Gas Flow Rate on the Formation of ZnO Nanorods and Their Effects on Photoelectrochemical Response

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