Influence of Junctions on Photoluminescence Decay in Thin Film Devices

Research output: Contribution to journalArticlepeer-review

26 Scopus Citations


The photoluminescence lifetime of III-V thin films is a major tool for the determination of minority-carrier lifetime. Prior work has dealt with the effects of surface recombination for various device geometries. Other work has shown the effect of self-absorption and photon recycling on the effective lifetime. We describe deep homojunctions thin-film devices. Model calculations show that the effective lifetime, as measured in the photoluminescence experiment, is always less than the bulk minority-carrier lifetime. In high-mobility materials, the effective photoluminescence lifetime may be dominated by diffusion and unrelated to recombination. An analysis of the data produces the minority-carrier mobility.

Original languageAmerican English
Pages (from-to)2937-2941
Number of pages5
JournalJournal of Applied Physics
Issue number7
StatePublished - 1987

NREL Publication Number

  • ACNR/JA-213-8616


Dive into the research topics of 'Influence of Junctions on Photoluminescence Decay in Thin Film Devices'. Together they form a unique fingerprint.

Cite this