Abstract
The photoluminescence lifetime of III-V thin films is a major tool for the determination of minority-carrier lifetime. Prior work has dealt with the effects of surface recombination for various device geometries. Other work has shown the effect of self-absorption and photon recycling on the effective lifetime. We describe deep homojunctions thin-film devices. Model calculations show that the effective lifetime, as measured in the photoluminescence experiment, is always less than the bulk minority-carrier lifetime. In high-mobility materials, the effective photoluminescence lifetime may be dominated by diffusion and unrelated to recombination. An analysis of the data produces the minority-carrier mobility.
Original language | American English |
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Pages (from-to) | 2937-2941 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 62 |
Issue number | 7 |
DOIs | |
State | Published - 1987 |
NREL Publication Number
- ACNR/JA-213-8616