Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

    Research output: Contribution to conferencePaper

    Original languageAmerican English
    Pages364-365
    Number of pages2
    StatePublished - 1985
    Event43rd Annual Meeting of the Electron Microscopy Society of America - Louisville, Kentucky
    Duration: 5 Aug 19859 Aug 1985

    Conference

    Conference43rd Annual Meeting of the Electron Microscopy Society of America
    CityLouisville, Kentucky
    Period5/08/859/08/85

    NREL Publication Number

    • ACNR/CP-213-6009

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