Influence of Na on the Electro-Optical Properties of Cu(In,Ga)Se2

Brian M. Keyes; Falah Hasoon; Pat Dippo; Ahmet Balcioglu; Fuad Abulfotuh

doi:10.1109/PVSC.1997.654132

Influence of Na on the Electro-Optical Properties of Cu(In,Ga)Se2

Brian M. Keyes, Falah Hasoon, Pat Dippo, Ahmet Balcioglu, Fuad Abulfotuh

Materials, Chemical, and Computational Science Research Operations

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

41 Scopus Citations

Abstract

Polycrystalline Cu(In,Ga)Se₂ (CIGS) thin films, grown by coevaporation of the constituent elements with different amounts of sodium (Na), were investigated. In some devices, an increased Na content was achieved through the incorporation of a thin layer of NaF deposited on the substrate prior to the growth of CIGS. The effect of Na on the electro-optical properties was addressed through characterization of the finished devices using photoluminescence (PL) and capacitance techniques. Results indicate the beneficial effect of Na as evidenced by increases in the device efficiency, open-circuit voltage, and PL intensity. Furthermore, these measurements provide evidence that Na 1) increases the net carrier concentration, and 2) reduces the number of gap states including those that act as minority-carrier traps.

Original language	American English
Pages	479-482
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1997.654132
State	Published - 1997
Event	Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference
City	Anaheim, CA, USA
Period	29/09/97 → 3/10/97

Bibliographical note

For preprint version, including full text online document, see NREL/CP-530-22963

NREL Publication Number

NREL/CP-520-24971

Access to Document

10.1109/PVSC.1997.654132

Cite this

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title = "Influence of Na on the Electro-Optical Properties of Cu(In,Ga)Se2",

abstract = "Polycrystalline Cu(In,Ga)Se2 (CIGS) thin films, grown by coevaporation of the constituent elements with different amounts of sodium (Na), were investigated. In some devices, an increased Na content was achieved through the incorporation of a thin layer of NaF deposited on the substrate prior to the growth of CIGS. The effect of Na on the electro-optical properties was addressed through characterization of the finished devices using photoluminescence (PL) and capacitance techniques. Results indicate the beneficial effect of Na as evidenced by increases in the device efficiency, open-circuit voltage, and PL intensity. Furthermore, these measurements provide evidence that Na 1) increases the net carrier concentration, and 2) reduces the number of gap states including those that act as minority-carrier traps.",

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doi = "10.1109/PVSC.1997.654132",

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AU - Keyes, Brian M.

AU - Hasoon, Falah

AU - Dippo, Pat

AU - Balcioglu, Ahmet

AU - Abulfotuh, Fuad

N1 - For preprint version, including full text online document, see NREL/CP-530-22963

PY - 1997

Y1 - 1997

N2 - Polycrystalline Cu(In,Ga)Se2 (CIGS) thin films, grown by coevaporation of the constituent elements with different amounts of sodium (Na), were investigated. In some devices, an increased Na content was achieved through the incorporation of a thin layer of NaF deposited on the substrate prior to the growth of CIGS. The effect of Na on the electro-optical properties was addressed through characterization of the finished devices using photoluminescence (PL) and capacitance techniques. Results indicate the beneficial effect of Na as evidenced by increases in the device efficiency, open-circuit voltage, and PL intensity. Furthermore, these measurements provide evidence that Na 1) increases the net carrier concentration, and 2) reduces the number of gap states including those that act as minority-carrier traps.

AB - Polycrystalline Cu(In,Ga)Se2 (CIGS) thin films, grown by coevaporation of the constituent elements with different amounts of sodium (Na), were investigated. In some devices, an increased Na content was achieved through the incorporation of a thin layer of NaF deposited on the substrate prior to the growth of CIGS. The effect of Na on the electro-optical properties was addressed through characterization of the finished devices using photoluminescence (PL) and capacitance techniques. Results indicate the beneficial effect of Na as evidenced by increases in the device efficiency, open-circuit voltage, and PL intensity. Furthermore, these measurements provide evidence that Na 1) increases the net carrier concentration, and 2) reduces the number of gap states including those that act as minority-carrier traps.

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DO - 10.1109/PVSC.1997.654132

M3 - Paper

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T2 - Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Influence of Na on the Electro-Optical Properties of Cu(In,Ga)Se2

Abstract

Conference

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