Influence of Oxygen Annealing Conditions on the Electronic Structure, Dielectric Function, and Charge Conduction of Gallium-Ferrite Thin Films

doi:10.3938/jkps.63.2179

Influence of Oxygen Annealing Conditions on the Electronic Structure, Dielectric Function, and Charge Conduction of Gallium-Ferrite Thin Films

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	2179-2184
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	63
Issue number	11
DOIs	https://doi.org/10.3938/jkps.63.2179
State	Published - 2013

NREL Publication Number

NREL/JA-5200-61235

Access to Document

10.3938/jkps.63.2179

Cite this

@article{64978471d3b349118eedbcb94cb7a299,

title = "Influence of Oxygen Annealing Conditions on the Electronic Structure, Dielectric Function, and Charge Conduction of Gallium-Ferrite Thin Films",

author = "NREL",

year = "2013",

doi = "10.3938/jkps.63.2179",

language = "American English",

volume = "63",

pages = "2179--2184",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "11",

}

TY - JOUR

T1 - Influence of Oxygen Annealing Conditions on the Electronic Structure, Dielectric Function, and Charge Conduction of Gallium-Ferrite Thin Films

AU - NREL, null

PY - 2013

Y1 - 2013

U2 - 10.3938/jkps.63.2179

DO - 10.3938/jkps.63.2179

M3 - Article

SN - 0374-4884

VL - 63

SP - 2179

EP - 2184

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 11

ER -