Influence of Perimeter Recombination on High-Efficiency GaAs P/N Heteroface Solar Cells

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)368-370
    Number of pages3
    JournalIEEE Electron Device Letters
    Issue number8
    StatePublished - 1988

    Bibliographical note

    Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana, and Spire Corporation, Bedford, Massachusetts

    NREL Publication Number

    • ACNR/JA-10644

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