Influence of Perimeter Recombination on High-Efficiency GaAs P/N Heteroface Solar Cells

doi:10.1109/55.746

Influence of Perimeter Recombination on High-Efficiency GaAs P/N Heteroface Solar Cells

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	368-370
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	EDL-9
Issue number	8
DOIs	https://doi.org/10.1109/55.746
State	Published - 1988

Bibliographical note

Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana, and Spire Corporation, Bedford, Massachusetts

NREL Publication Number

ACNR/JA-10644

Access to Document

10.1109/55.746

Cite this

@article{8305b67655e04b6b96003eed73f69911,

title = "Influence of Perimeter Recombination on High-Efficiency GaAs P/N Heteroface Solar Cells",

author = "NREL",

note = "Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana, and Spire Corporation, Bedford, Massachusetts",

year = "1988",

doi = "10.1109/55.746",

language = "American English",

volume = "EDL-9",

pages = "368--370",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Influence of Perimeter Recombination on High-Efficiency GaAs P/N Heteroface Solar Cells

AU - NREL, null

N1 - Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana, and Spire Corporation, Bedford, Massachusetts

PY - 1988

Y1 - 1988

U2 - 10.1109/55.746

DO - 10.1109/55.746

M3 - Article

SN - 0741-3106

VL - EDL-9

SP - 368

EP - 370

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

ER -