Abstract
We have studied the influence of substrate temperature and hydrogen dilution ratio on the properties of silicon thin films deposited on single-crystal silicon and glass substrates. We varied the initial substrate temperature from 200? to 400?C and the dilution ratio from 10 to 100. We also studied the effectiveness of the use of a seed layer to increase the crystallinity of the films. The filmswere analyzed by atomic force microscopy, X-ray diffraction, Raman spectroscopy, and transmission and scanning electron microscopy. We found that as the dilution ratio is increased, the films go from amorphous, to a mixture of amorphous and crystalline, to nanocrystalline. The effect of substrate temperature is to increase the amount of crystallinity in the film for a given dilution ratio. Wefound that the use of a seed layer has limited effects and is important only for low values of dilution ratio and substrate temperature, when the films have large amounts of the amorphous phase.
| Original language | American English |
|---|---|
| Number of pages | 9 |
| State | Published - 2003 |
| Event | 2003 Materials Research Society Spring Meeting - San Francisco, California Duration: 21 Apr 2003 → 25 Apr 2003 |
Conference
| Conference | 2003 Materials Research Society Spring Meeting |
|---|---|
| City | San Francisco, California |
| Period | 21/04/03 → 25/04/03 |
NREL Publication Number
- NREL/CP-520-33929
Keywords
- atomic force microscopy (AFM)
- hot-wire chemical vapor deposition (HWCVD)
- hydrogen dilution ratio
- nanocrystalline
- PV
- raman spectroscopy
- scanning electron microscopy (SEM)
- silicon thin films
- substrate temperature
- X-ray diffraction