Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition

H. R. Moutinho; C. S. Jiang; B. Nelson; Y. Xu; J. Perkins; B. To; K. M. Jones; M. J. Romero; M. M. Al-Jassim

doi:10.1557/proc-762-a5.4

Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition

H. R. Moutinho, C. S. Jiang, B. Nelson, Y. Xu, J. Perkins, B. To, K. M. Jones, M. J. Romero, M. M. Al-Jassim

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

We have studied the influence of substrate temperature and hydrogen dilution ratio on the properties of silicon thin films deposited on single-crystal silicon and glass substrates. We varied the initial substrate temperature from 200° to 400°C and the dilution ratio from 10 to 100. We also studied the effectiveness of the use of a seed layer to increase the crystallinity of the films. The films were analyzed by atomic force microscopy, X-ray diffraction, Raman spectroscopy, and transmission and scanning electron microscopy. We found that as the dilution ratio is increased, the films go from amorphous, to a mixture of amorphous and crystalline, to nanocrystalline. The effect of substrate temperature is to increase the amount of crystallinity in the film for a given dilution ratio. We found that the use of a seed layer has limited effects and is important only for low values of dilution ratio and substrate temperature, when the films have large amounts of the amorphous phase.

Original language	American English
Pages	571-576
Number of pages	6
DOIs	https://doi.org/10.1557/proc-762-a5.4
State	Published - 2003
Event	Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 - San Francisco, CA, United States Duration: 22 Apr 2003 → 25 Apr 2003

Conference

Conference	Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003
Country/Territory	United States
City	San Francisco, CA
Period	22/04/03 → 25/04/03

Bibliographical note

For preprint version, including full text online document, see NREL/CP-520-33929

NREL Publication Number

NREL/CP-520-36063

Access to Document

10.1557/proc-762-a5.4

Cite this

Moutinho, H. R., Jiang, C. S., Nelson, B., Xu, Y., Perkins, J., To, B., Jones, K. M., Romero, M. J., & Al-Jassim, M. M. (2003). Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition. 571-576. Paper presented at Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003, San Francisco, CA, United States. https://doi.org/10.1557/proc-762-a5.4

@conference{1e2d0e3679e64289aa6711730cf32df4,

title = "Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition",

abstract = "We have studied the influence of substrate temperature and hydrogen dilution ratio on the properties of silicon thin films deposited on single-crystal silicon and glass substrates. We varied the initial substrate temperature from 200° to 400°C and the dilution ratio from 10 to 100. We also studied the effectiveness of the use of a seed layer to increase the crystallinity of the films. The films were analyzed by atomic force microscopy, X-ray diffraction, Raman spectroscopy, and transmission and scanning electron microscopy. We found that as the dilution ratio is increased, the films go from amorphous, to a mixture of amorphous and crystalline, to nanocrystalline. The effect of substrate temperature is to increase the amount of crystallinity in the film for a given dilution ratio. We found that the use of a seed layer has limited effects and is important only for low values of dilution ratio and substrate temperature, when the films have large amounts of the amorphous phase.",

author = "Moutinho, {H. R.} and Jiang, {C. S.} and B. Nelson and Y. Xu and J. Perkins and B. To and Jones, {K. M.} and Romero, {M. J.} and Al-Jassim, {M. M.}",

note = "For preprint version, including full text online document, see NREL/CP-520-33929; Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 ; Conference date: 22-04-2003 Through 25-04-2003",

year = "2003",

doi = "10.1557/proc-762-a5.4",

language = "American English",

pages = "571--576",

}

Moutinho, HR, Jiang, CS , Nelson, B, Xu, Y, Perkins, J, To, B, Jones, KM, Romero, MJ & Al-Jassim, MM 2003, 'Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition', Paper presented at Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003, San Francisco, CA, United States, 22/04/03 - 25/04/03 pp. 571-576. https://doi.org/10.1557/proc-762-a5.4

Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition. / Moutinho, H. R.; Jiang, C. S.; Nelson, B. et al.
2003. 571-576 Paper presented at Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003, San Francisco, CA, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition

AU - Moutinho, H. R.

AU - Jiang, C. S.

AU - Nelson, B.

AU - Xu, Y.

AU - Perkins, J.

AU - To, B.

AU - Jones, K. M.

AU - Romero, M. J.

AU - Al-Jassim, M. M.

N1 - For preprint version, including full text online document, see NREL/CP-520-33929

PY - 2003

Y1 - 2003

N2 - We have studied the influence of substrate temperature and hydrogen dilution ratio on the properties of silicon thin films deposited on single-crystal silicon and glass substrates. We varied the initial substrate temperature from 200° to 400°C and the dilution ratio from 10 to 100. We also studied the effectiveness of the use of a seed layer to increase the crystallinity of the films. The films were analyzed by atomic force microscopy, X-ray diffraction, Raman spectroscopy, and transmission and scanning electron microscopy. We found that as the dilution ratio is increased, the films go from amorphous, to a mixture of amorphous and crystalline, to nanocrystalline. The effect of substrate temperature is to increase the amount of crystallinity in the film for a given dilution ratio. We found that the use of a seed layer has limited effects and is important only for low values of dilution ratio and substrate temperature, when the films have large amounts of the amorphous phase.

AB - We have studied the influence of substrate temperature and hydrogen dilution ratio on the properties of silicon thin films deposited on single-crystal silicon and glass substrates. We varied the initial substrate temperature from 200° to 400°C and the dilution ratio from 10 to 100. We also studied the effectiveness of the use of a seed layer to increase the crystallinity of the films. The films were analyzed by atomic force microscopy, X-ray diffraction, Raman spectroscopy, and transmission and scanning electron microscopy. We found that as the dilution ratio is increased, the films go from amorphous, to a mixture of amorphous and crystalline, to nanocrystalline. The effect of substrate temperature is to increase the amount of crystallinity in the film for a given dilution ratio. We found that the use of a seed layer has limited effects and is important only for low values of dilution ratio and substrate temperature, when the films have large amounts of the amorphous phase.

UR - http://www.scopus.com/inward/record.url?scp=1642541192&partnerID=8YFLogxK

U2 - 10.1557/proc-762-a5.4

DO - 10.1557/proc-762-a5.4

M3 - Paper

AN - SCOPUS:1642541192

SP - 571

EP - 576

T2 - Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003

Y2 - 22 April 2003 through 25 April 2003

ER -

Moutinho HR, Jiang CS , Nelson B, Xu Y, Perkins J, To B et al.. Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition. 2003. Paper presented at Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003, San Francisco, CA, United States. doi: 10.1557/proc-762-a5.4

Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

Other files and links

Fingerprint

Cite this