Influence of Support Electrolytic in the Electrodeposition of Cu-Ga-Se Thin Films

Todd Deutsch, John Turner, A. Fernandez, B. Lara-Lara

Research output: Contribution to journalArticlepeer-review

3 Scopus Citations


CuGaSe2 is an important thin film electronic material that possesses several attributes that make it appealing for solar energy conversion. Due to its properties it can be incorporated in to various devices, among the greatest highlights are photovoltaic cells, as well as its potential use as photocathodes for hydrogen production, via the photoelectrolysis. There are several methods of its preparation, most notably electrodeposition that has the potential for large areas and high volumes. Electrodeposition of ternary and/or quaternary semiconductors generally proceeds via the formation of a binary, which is subsequently reacted to form the ternary compound. Several conditions must be controlled to form binary compounds that include the use of complexing agents, buffers, temperature, etc. In this paper, we discuss the effect of anion composition in the electrolytic bath and the type of lithium salts, in order to manipulate the atomic concentration of CuGaSe2 during the electrodeposition of thin films, yielding copper-rich, gallium-rich or stoichiometric thin films. We also present the results of a study on the morphology and structure obtained using two types of substrates both before and after performing a heat treatment.

Original languageAmerican English
Pages (from-to)373-383
Number of pages11
JournalSuperlattices and Microstructures
StatePublished - 1 Jan 2017

Bibliographical note

Publisher Copyright:
© 2016 Elsevier Ltd

NREL Publication Number

  • NREL/JA-5900-67685


  • Chalcogenide compounds
  • Electrodeposition
  • Thin films


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