Infrared Charge-Modulation Spectroscopy of Defects in Phosphorus Doped Amorphous Silicon

Kai Zhu; E. A. Schiff; G. Ganguly

doi:10.1557/proc-715-a5.4

Infrared Charge-Modulation Spectroscopy of Defects in Phosphorus Doped Amorphous Silicon

Kai Zhu, E. A. Schiff, G. Ganguly

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

We present infrared charge-modulation absorption spectra on phosphorus-doped amorphous silicon (a-Si:H:P) with doping levels between 0.17%-5%. At higher doping levels (1%-5%) we find a sharp spectral line near 0.75 eV with a width of 0.1 eV. We attribute this line to the internal optical transitions of a complex incorporating four fold coordinated phosphorus and a dangling bond. This line is barely detectable in samples with lower doping levels (below 1%). In these samples a much broader line dominates the spectrum that we attribute to uncomplexed dopants. The relative strength of the two spectral features is in rough agreement with a model proposed by Street that has not been previously tested experimentally.

Original language	American English
Pages	301-308
Number of pages	8
DOIs	https://doi.org/10.1557/proc-715-a5.4
State	Published - 2002
Externally published	Yes
Event	Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium - San Francisco, California Duration: 2 Apr 2002 → 5 Apr 2002

Conference

Conference	Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium
City	San Francisco, California
Period	2/04/02 → 5/04/02

Bibliographical note

Work performed by Syracuse University, Syracuse, New York; BP Solar, Toano, Virginia

NREL Publication Number

NREL/CP-520-34499

Access to Document

10.1557/proc-715-a5.4

Cite this

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title = "Infrared Charge-Modulation Spectroscopy of Defects in Phosphorus Doped Amorphous Silicon",

abstract = "We present infrared charge-modulation absorption spectra on phosphorus-doped amorphous silicon (a-Si:H:P) with doping levels between 0.17%-5%. At higher doping levels (1%-5%) we find a sharp spectral line near 0.75 eV with a width of 0.1 eV. We attribute this line to the internal optical transitions of a complex incorporating four fold coordinated phosphorus and a dangling bond. This line is barely detectable in samples with lower doping levels (below 1%). In these samples a much broader line dominates the spectrum that we attribute to uncomplexed dopants. The relative strength of the two spectral features is in rough agreement with a model proposed by Street that has not been previously tested experimentally.",

author = "Kai Zhu and Schiff, {E. A.} and G. Ganguly",

note = "Work performed by Syracuse University, Syracuse, New York; BP Solar, Toano, Virginia; Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium ; Conference date: 02-04-2002 Through 05-04-2002",

year = "2002",

doi = "10.1557/proc-715-a5.4",

language = "American English",

pages = "301--308",

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TY - CONF

T1 - Infrared Charge-Modulation Spectroscopy of Defects in Phosphorus Doped Amorphous Silicon

AU - Zhu, Kai

AU - Schiff, E. A.

AU - Ganguly, G.

N1 - Work performed by Syracuse University, Syracuse, New York; BP Solar, Toano, Virginia

PY - 2002

Y1 - 2002

N2 - We present infrared charge-modulation absorption spectra on phosphorus-doped amorphous silicon (a-Si:H:P) with doping levels between 0.17%-5%. At higher doping levels (1%-5%) we find a sharp spectral line near 0.75 eV with a width of 0.1 eV. We attribute this line to the internal optical transitions of a complex incorporating four fold coordinated phosphorus and a dangling bond. This line is barely detectable in samples with lower doping levels (below 1%). In these samples a much broader line dominates the spectrum that we attribute to uncomplexed dopants. The relative strength of the two spectral features is in rough agreement with a model proposed by Street that has not been previously tested experimentally.

AB - We present infrared charge-modulation absorption spectra on phosphorus-doped amorphous silicon (a-Si:H:P) with doping levels between 0.17%-5%. At higher doping levels (1%-5%) we find a sharp spectral line near 0.75 eV with a width of 0.1 eV. We attribute this line to the internal optical transitions of a complex incorporating four fold coordinated phosphorus and a dangling bond. This line is barely detectable in samples with lower doping levels (below 1%). In these samples a much broader line dominates the spectrum that we attribute to uncomplexed dopants. The relative strength of the two spectral features is in rough agreement with a model proposed by Street that has not been previously tested experimentally.

UR - http://www.scopus.com/inward/record.url?scp=0036909559&partnerID=8YFLogxK

U2 - 10.1557/proc-715-a5.4

DO - 10.1557/proc-715-a5.4

M3 - Paper

AN - SCOPUS:0036909559

SP - 301

EP - 308

T2 - Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium

Y2 - 2 April 2002 through 5 April 2002

ER -

Infrared Charge-Modulation Spectroscopy of Defects in Phosphorus Doped Amorphous Silicon

Abstract

Conference

Bibliographical note

NREL Publication Number

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