Infrared Charge-Modulation Spectroscopy of Defects in Phosphorus Doped Amorphous Silicon

Chemistry

• Phosphorus 100%
• Amorphous Silicon 100%
• Dangling Bond 33%
• Doping Material 33%
• Optical Transition 33%
• Absorption Spectra 33%

Engineering

• Doping Level 100%
• Dopants 33%
• Internals 33%
• Spectral Feature 33%
• Relative Strength 33%
• Dangling Bond 33%
• Optical Transition 33%
• Line Spectra 33%

Physics

• Amorphous Silicon 100%
• Line Spectra 50%
• Absorption Spectra 50%
• Optical Transition 50%