Infrared Spectroscopy of Polycrystalline ZnO and ZnO:N Thin Films

B. M. Keyes, L. M. Gedvilas, X. Li, T. J. Coutts

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Abstract

Polycrystalline zinc oxide (ZnO) and nitrogen-doped zinc oxide (ZnO:N) films, about 1 μm thick, were grown by metalorganic chemical vapor deposition on crystalline silicon substrates. Infrared absorption measurements reveal a complex growth chemistry resulting in the presence of carbon, oxygen, and nitrogen-related functional groups not seen in single-crystal material. Noteworthy changes in the absorbance spectra that occur with the incorporation of nitrogen include a group of strongly absorbing bands around 1800 cm -1 and a band at 3020 cm-1 attributable to a N-H bond. These atomic configurations, in addition to the observed O-H bands around 3400 cm-1, provide insight into the difficulties of creating p-type ZnO through the incorporation of nitrogen.

Original languageAmerican English
Pages (from-to)297-302
Number of pages6
JournalJournal of Crystal Growth
Volume281
Issue number2-4
DOIs
StatePublished - 2005

NREL Publication Number

  • NREL/JA-520-36617

Keywords

  • A1. Characterization
  • A1. FTIR-spectroscopy
  • A1. Impurities
  • A3. Metalorganic chemical vapor deposition
  • B1. Oxides
  • B1. Zinc compounds

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