Abstract
Polycrystalline zinc oxide (ZnO) and nitrogen-doped zinc oxide (ZnO:N) films, about 1 μm thick, were grown by metalorganic chemical vapor deposition on crystalline silicon substrates. Infrared absorption measurements reveal a complex growth chemistry resulting in the presence of carbon, oxygen, and nitrogen-related functional groups not seen in single-crystal material. Noteworthy changes in the absorbance spectra that occur with the incorporation of nitrogen include a group of strongly absorbing bands around 1800 cm -1 and a band at 3020 cm-1 attributable to a N-H bond. These atomic configurations, in addition to the observed O-H bands around 3400 cm-1, provide insight into the difficulties of creating p-type ZnO through the incorporation of nitrogen.
Original language | American English |
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Pages (from-to) | 297-302 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 281 |
Issue number | 2-4 |
DOIs | |
State | Published - 2005 |
NREL Publication Number
- NREL/JA-520-36617
Keywords
- A1. Characterization
- A1. FTIR-spectroscopy
- A1. Impurities
- A3. Metalorganic chemical vapor deposition
- B1. Oxides
- B1. Zinc compounds