InGaAs/GaAs QD Superlattices: MOVPE Growth, Structural and Optical Characterization, and Application in Intermediate-Band Solar Cells

A. G. Norman; M. C. Hanna; P. Dippo; D. H. Levi; R. C. Reedy; J. S. Ward; M. M. Al-Jassim

InGaAs/GaAs QD Superlattices: MOVPE Growth, Structural and Optical Characterization, and Application in Intermediate-Band Solar Cells

A. G. Norman, M. C. Hanna, P. Dippo, D. H. Levi, R. C. Reedy, J. S. Ward, M. M. Al-Jassim

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

32 Scopus Citations

Abstract

We report on the growth and characterization of InGaAs/GaAs quantum dot (QD) superlattices for application in intermediate-band solar cells (IBSCs). Good optical and structural quality QD superlattices with up to 50 periods were obtained by metal-organic vapor-phase epitaxy (MOVPE) growth on {113}B GaAs substrates. Solar cells containing Si d-doped and undoped QD superlattice absorption regions have been fabricated and their performance compared with control cells containing undoped GaAs or undoped InGaAs/GaAs superlattice absorption regions. The QD superlattice cells exhibited photoresponses extended to longer wavelengths than the control cells. The introduction of QDs to the absorbing region of the solar cells resulted in a decrease in the open-circuit voltages and, in some cases, a decrease in the short-circuit currents of the cells.

Original language	American English
Pages	43-48
Number of pages	6
State	Published - 2005
Event	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: 3 Jan 2005 → 7 Jan 2005

Conference

Conference	31st IEEE Photovoltaic Specialists Conference - 2005
Country/Territory	United States
City	Lake Buena Vista, FL
Period	3/01/05 → 7/01/05

Bibliographical note

For preprint version see NREL/CP-520-37405

NREL Publication Number

NREL/CP-520-38857

Cite this

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title = "InGaAs/GaAs QD Superlattices: MOVPE Growth, Structural and Optical Characterization, and Application in Intermediate-Band Solar Cells",

abstract = "We report on the growth and characterization of InGaAs/GaAs quantum dot (QD) superlattices for application in intermediate-band solar cells (IBSCs). Good optical and structural quality QD superlattices with up to 50 periods were obtained by metal-organic vapor-phase epitaxy (MOVPE) growth on {113}B GaAs substrates. Solar cells containing Si d-doped and undoped QD superlattice absorption regions have been fabricated and their performance compared with control cells containing undoped GaAs or undoped InGaAs/GaAs superlattice absorption regions. The QD superlattice cells exhibited photoresponses extended to longer wavelengths than the control cells. The introduction of QDs to the absorbing region of the solar cells resulted in a decrease in the open-circuit voltages and, in some cases, a decrease in the short-circuit currents of the cells.",

author = "Norman, {A. G.} and Hanna, {M. C.} and P. Dippo and Levi, {D. H.} and Reedy, {R. C.} and Ward, {J. S.} and Al-Jassim, {M. M.}",

note = "For preprint version see NREL/CP-520-37405; 31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

year = "2005",

language = "American English",

pages = "43--48",

}

InGaAs/GaAs QD Superlattices: MOVPE Growth, Structural and Optical Characterization, and Application in Intermediate-Band Solar Cells. / Norman, A. G.; Hanna, M. C.; Dippo, P. et al.
2005. 43-48 Paper presented at 31st IEEE Photovoltaic Specialists Conference - 2005, Lake Buena Vista, FL, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - InGaAs/GaAs QD Superlattices: MOVPE Growth, Structural and Optical Characterization, and Application in Intermediate-Band Solar Cells

AU - Norman, A. G.

AU - Hanna, M. C.

AU - Dippo, P.

AU - Levi, D. H.

AU - Reedy, R. C.

AU - Ward, J. S.

AU - Al-Jassim, M. M.

N1 - For preprint version see NREL/CP-520-37405

PY - 2005

Y1 - 2005

N2 - We report on the growth and characterization of InGaAs/GaAs quantum dot (QD) superlattices for application in intermediate-band solar cells (IBSCs). Good optical and structural quality QD superlattices with up to 50 periods were obtained by metal-organic vapor-phase epitaxy (MOVPE) growth on {113}B GaAs substrates. Solar cells containing Si d-doped and undoped QD superlattice absorption regions have been fabricated and their performance compared with control cells containing undoped GaAs or undoped InGaAs/GaAs superlattice absorption regions. The QD superlattice cells exhibited photoresponses extended to longer wavelengths than the control cells. The introduction of QDs to the absorbing region of the solar cells resulted in a decrease in the open-circuit voltages and, in some cases, a decrease in the short-circuit currents of the cells.

AB - We report on the growth and characterization of InGaAs/GaAs quantum dot (QD) superlattices for application in intermediate-band solar cells (IBSCs). Good optical and structural quality QD superlattices with up to 50 periods were obtained by metal-organic vapor-phase epitaxy (MOVPE) growth on {113}B GaAs substrates. Solar cells containing Si d-doped and undoped QD superlattice absorption regions have been fabricated and their performance compared with control cells containing undoped GaAs or undoped InGaAs/GaAs superlattice absorption regions. The QD superlattice cells exhibited photoresponses extended to longer wavelengths than the control cells. The introduction of QDs to the absorbing region of the solar cells resulted in a decrease in the open-circuit voltages and, in some cases, a decrease in the short-circuit currents of the cells.

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M3 - Paper

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T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

InGaAs/GaAs QD Superlattices: MOVPE Growth, Structural and Optical Characterization, and Application in Intermediate-Band Solar Cells

Abstract

Conference

Bibliographical note

NREL Publication Number

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Cite this