Inhomogeneous Dangling Bond Spin Relaxation in Undoped Amorphous Hydrogenated Silicon (a-Si:H): (Abstract No. AG3)

Research output: Contribution to journal › Article

Original language	American English
Number of pages	399
Journal	Bulletin of the American Physical Society
Volume	32
Issue number	3
State	Published - 1987

Work performed by Syracuse University, Syracuse, New York

NREL Publication Number

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title = "Inhomogeneous Dangling Bond Spin Relaxation in Undoped Amorphous Hydrogenated Silicon (a-Si:H): (Abstract No. AG3)",

author = "NREL",

note = "Work performed by Syracuse University, Syracuse, New York",

year = "1987",

language = "American English",

volume = "32",

journal = "Bulletin of the American Physical Society",

issn = "0003-0503",

publisher = "American Physical Society",

number = "3",

}

TY - JOUR

T1 - Inhomogeneous Dangling Bond Spin Relaxation in Undoped Amorphous Hydrogenated Silicon (a-Si:H)

T2 - (Abstract No. AG3)

AU - NREL, null

N1 - Work performed by Syracuse University, Syracuse, New York

PY - 1987

Y1 - 1987

M3 - Article

SN - 0003-0503

VL - 32

JO - Bulletin of the American Physical Society

JF - Bulletin of the American Physical Society

IS - 3

ER -