Initial Stage of Formation of a Metal-Semiconductor Interface: Al on GaAs(110)

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	690-692
Number of pages	3
Journal	Journal of vacuum science & technology
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.571086
State	Published - 1981

NREL Publication Number

@article{b6a81f4b3d7b41c29a9ae2a79fcd6550,

title = "Initial Stage of Formation of a Metal-Semiconductor Interface: Al on GaAs(110)",

author = "NREL",

year = "1981",

doi = "10.1116/1.571086",

language = "American English",

volume = "19",

pages = "690--692",

journal = "Journal of vacuum science & technology",

issn = "0022-5355",

publisher = "American Institute of Physics",

number = "3",

}