Abstract
We present our development of n-type nano-structured hydrogenated silicon oxide (nc-SiOx:H) as a dual-function layer in multi-junction solar cells. We optimized nc-SiOx:H and attained a conductivity suitable for a doped layer and optical property suitable for an inter-reflection layer. We tested the effectiveness of the dual-function nc-SiOx:H layer by replacing the normal n layer between the middle and the bottom cells in an a-Si:H/a-SiGe:H/nc-Si:H triple-junction structure. A significant gain in the middle cell current density of ∼1.0 mA/cm2 is achieved. We further optimized the component cells and the triple-junction structures and attained an initial active-area cell efficiency of 16.3.
Original language | American English |
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Article number | 113512 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 99 |
Issue number | 11 |
DOIs | |
State | Published - 12 Sep 2011 |
NREL Publication Number
- NREL/JA-5200-53265
Keywords
- multi-junction
- nanostructure
- silicon solar cell
- thin-film